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Journal ArticleDOI

Exchange interactions in quantum well subbands

K. M. S. V. Bandara, +4 more
- 14 Nov 1988 - 
- Vol. 53, Iss: 20, pp 1931-1933
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TLDR
In this article, it was shown that exchange interactions in the two-dimensional electron gas in quantum wells could cause observable effects on subband energies and intersubband transition energies, and that the intrasubband exchange interaction can produce an energy shift which is substantially larger than the direct Coulomb energy shift.
Abstract
It is shown that exchange interactions in the two‐dimensional electron gas in quantum wells could cause observable effects on subband energies and intersubband transition energies. In the case of doped quantum wells, the intrasubband exchange interaction can produce an energy shift which is substantially larger than the direct Coulomb energy shift. Theoretical estimates of such shifts are compared with experimental measurements of the infrared photoconductivity of multiple quantum well AlGaAs/GaAs structures with wells doped at about 1018 cm−3.

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Citations
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Journal ArticleDOI

Systematic experimental and theoretical investigation of intersubband absorption in Ga N ∕ Al N quantum wells

TL;DR: In this paper, the authors studied the electronic confinement in hexagonal (1.33 -1.91)-1.5-1.3-μm hexagonal quantum well by means of high-resolution x-ray diffraction and transmission electron microscopy.
Journal ArticleDOI

Local fields in the electrodynamics of mesoscopic media

TL;DR: A review of the role played by local fields in the high-frequency electrodynamics of mesoscopic systems exhibiting essential quantum confinement of the electron motion is presented in this article.
Journal ArticleDOI

Si1−xGex/Si multiple quantum well infrared detector

TL;DR: In this article, a long-wavelength infrared detector is demonstrated using Si1−xGex/Si multiple quantum wells for the first time, and a broad peak in the photoresponse is observed near 9 μm with a full width at half maximum of about 80 meV which provides the response in the 6-12 μm range.
Journal ArticleDOI

Interlevel Ge/Si quantum dot infrared photodetector

TL;DR: In this paper, a self-assembled Ge/Si quantum dot interlevel infrared photodetector operating at room temperature and at normal incidence is demonstrated, and the spectral response exhibits two peaks in the 58-82 and 132-147 meV energy regions with full width at half maximum linewidths as narrow as 25 meV.
Book ChapterDOI

Chapter 1 The Basic Physics of Intersubband Transitions

TL;DR: In this article, the authors focus on the basic aspects of intersubband transitions, with the main emphasis on linear absorption, using Fermi's golden rule for induced transition rate in the framework of one-band effective mass approximation.
References
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Journal ArticleDOI

First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well

TL;DR: In this paper, a dipole occurs between two envelope states of the conduction-band electron wave function, and is called a quantum well envelope state transition (QWEST).
Journal ArticleDOI

New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices

TL;DR: In this article, a 10.8 μm superlattice infrared detector based on doped quantum wells of GaAs/AlGaAs was proposed, which achieved a narrow bandwidth (10%) photosensitivity with a responsivity of 0.52 A/W and an estimated speed of 30 ps.
Journal ArticleDOI

Energy-gap discontinuities and effective masses for G a A s − Al x Ga 1 − x As quantum wells

TL;DR: In this article, a single set of quantum-well parameters that describe the energies of the observed exciton transitions has been determined for both parabolic and square GaAs quantum wells grown with the system.
Journal ArticleDOI

Parabolic quantum wells with the G a A s − Al x Ga 1 − x As system

TL;DR: In this paper, it was shown that parabolic quantum wells can lead to parity-allowed (n = 2)-forbidden) transitions with strengths greater than that of nearby square wells.
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