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Explosive vapor sensor using poly (3-hexylthiophene) and CuII tetraphenylporphyrin composite based organic field effect transistors

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TLDR
In this paper, organic field effect transistors based on poly(3-hexylthiophene) and CuII tetraphenylporphyrin composite were investigated as sensors for detection of vapors of nitro-based explosive compounds.
Abstract
Organic field effect transistors based on poly(3-hexylthiophene) and CuII tetraphenylporphyrin composite were investigated as sensors for detection of vapors of nitrobased explosive compounds, viz., 1,3,5-trinitro-1,3,5-triazacyclohexane (RDX), 2,4,6-trinitrotoluene (TNT), and dinitrobenzene, which are also strong oxidizing agents. Significant changes, suitable for sensor response, were observed in transistor “on” current (Ion) and conductance (S) after exposure. A similar device response was, however, not observed for oxidizing agents such as benzoquinone and benzophenone. The Fourier transform infrared spectrometry experiments supported the results, where exposure to RDX and TNT vapors resulted in a significant shift in IR peaks.

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Citations
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Journal ArticleDOI

Synthesis and characterization of an ester-terminated organic semiconductor for ethanol vapor detection

TL;DR: An organic field effect transistor (OFET) based on a newly synthesized organic molecule with an ester end group (ANOAT) was tested in a sensor for the detection of ethanol vapor.
Journal ArticleDOI

Detection of explosive analytes using a dendrimer-based field-effect transistor

TL;DR: In this article, a top-contact, bottom-gate organic field-effect transistor (OFET) was used to detect nitroaromatic vapors using the drain current.
Journal ArticleDOI

The nature and role of trap states in a dendrimer-based organic field-effect transistor explosive sensor

TL;DR: In this paper, the fabrication and charge transport characterization of carbazole dendrimer-based organic field-effect transistors (OFETs) for the sensing of explosive vapors was reported.
Journal ArticleDOI

A New Type of Explosive Chemical Detector Based on an Organic Photovoltaic Cell

TL;DR: In this paper, a new type of chemical sensor to detect explosive related compounds has been designed and fabricated with an organic photovoltaic cell as the active element, which is performed by optically exciting the cell while its open-circuit voltage is continuously sampled.
Journal ArticleDOI

An organic field effect transistors-based sensing platform for environmental/security applications

TL;DR: In this article, an organic field effect transistors (OFET) was used for detection of various nitro-based explosive vapors with greater than parts per billion sensitivity range, where significant changes in ON current (Ion) and transconductance (gm) extracted from electrical characteristics of the OFET after exposure to vapors of various explosive compounds.
References
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Book

Semiconductor Devices: Physics and Technology

S. M. Sze
TL;DR: In this paper, the transmission coefficient of a symmetric resonance tunneling diode has been derived for a Symmetric Resonant-Tunneling Diode, and it has been shown that it can be computed in terms of the Density of States in Semiconductor.
Journal ArticleDOI

Rothemund and Adler-Longo reactions revisited: synthesis of tetraphenylporphyrins under equilibrium conditions

TL;DR: In this article, a new synthetic strategy for preparing tetraphenylporphyrins is presented, which should greatly expand synthetic entries into porphyrin-containing model systems, and is complementary to the Adler-Longo procedure.
Journal ArticleDOI

Fluorescent Porous Polymer Films as TNT Chemosensors: Electronic and Structural Effects

TL;DR: In this paper, the synthesis, spectroscopy, and fluorescence quenching behavior of pentiptycene-derived phenyleneethynylene polymers, 1−3, are reported.
Journal ArticleDOI

Macromolecular electronic device: Field-effect transistor with a polythiophene thin film

TL;DR: In this paper, the first solid-state field-effect transistor has been fabricated utilizing a film of an organic macromolecule, polythiophene, as a semiconductor.
Journal ArticleDOI

Field‐effect mobility of poly(3‐hexylthiophene)

TL;DR: In this paper, a field effect transistor structure was used to study the transport properties of poly(3−hexylthiophene) and showed that the field effect mobility was 10−5−10−4 cm2/V
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