Journal ArticleDOI
Explosive vapor sensor using poly (3-hexylthiophene) and CuII tetraphenylporphyrin composite based organic field effect transistors
Ravishankar S. Dudhe,Shree Prakash Tiwari,Harshil N. Raval,Mrunal A. Khaderbad,Rahul Singh,Jasmine Sinha,M. Yedukondalu,Mangalampalli Ravikanth,Anil Kumar,V. Ramgopal Rao +9 more
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TLDR
In this paper, organic field effect transistors based on poly(3-hexylthiophene) and CuII tetraphenylporphyrin composite were investigated as sensors for detection of vapors of nitro-based explosive compounds.Abstract:
Organic field effect transistors based on poly(3-hexylthiophene) and CuII tetraphenylporphyrin composite were investigated as sensors for detection of vapors of nitrobased explosive compounds, viz., 1,3,5-trinitro-1,3,5-triazacyclohexane (RDX), 2,4,6-trinitrotoluene (TNT), and dinitrobenzene, which are also strong oxidizing agents. Significant changes, suitable for sensor response, were observed in transistor “on” current (Ion) and conductance (S) after exposure. A similar device response was, however, not observed for oxidizing agents such as benzoquinone and benzophenone. The Fourier transform infrared spectrometry experiments supported the results, where exposure to RDX and TNT vapors resulted in a significant shift in IR peaks.read more
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Improving the selectivity to polar vapors of OFET-based sensors by using the transfer characteristics hysteresis response
TL;DR: In this article, the hysteresis of the transfer-characteristics of P3HT-based OFETs is used as an additional sensing parameter for the detection of polar vapors.
Journal ArticleDOI
Large sensitivity enhancement in semiconducting organic field effect transistor sensors through incorporation of ultra-fine platinum nanoparticles
TL;DR: In this article, the authors reported remarkable improvement in sensitivity of pentacene-based field effect transistor devices towards trace nitro-aromatic explosive vapors through the incorporation of high density, sub-2'nm platinum nanoparticles (NPs) within these structures.
Journal ArticleDOI
Investigation of effects of ionizing radiation exposure on material properties of organic semiconducting oligomer – Pentacene
TL;DR: In this paper, the changes in various material properties of a very well-known organic semiconducting oligomer, pentacene, upon exposure to ionizing radiation of γ-rays using Cobalt-60 radiation source were investigated.
Journal ArticleDOI
Low-Operating-Voltage Operation and Improvement in Sensitivity With Passivated OFET Sensors for Determining Total Dose Radiation
Harshil N. Raval,V.R. Rao +1 more
TL;DR: In this article, a low-operating-voltage organic semiconducting material sensors for determining total dose radiation are proposed using high-k material in a gate dielectric stack, and a thin silicon nitride layer deposited by hot-wire CVD process was used as a passivation layer.
Journal ArticleDOI
Sensitive gas sensor embedded in a vertical polymer space-charge-limited transistor
TL;DR: In this article, a very sensitive gas sensor embedded in a vertical polymer space-charge-limited transistor is presented, which can be used for non-invasive breath monitor in point-of-care applications.
References
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TL;DR: In this paper, the transmission coefficient of a symmetric resonance tunneling diode has been derived for a Symmetric Resonant-Tunneling Diode, and it has been shown that it can be computed in terms of the Density of States in Semiconductor.
Journal ArticleDOI
Rothemund and Adler-Longo reactions revisited: synthesis of tetraphenylporphyrins under equilibrium conditions
TL;DR: In this article, a new synthetic strategy for preparing tetraphenylporphyrins is presented, which should greatly expand synthetic entries into porphyrin-containing model systems, and is complementary to the Adler-Longo procedure.
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Fluorescent Porous Polymer Films as TNT Chemosensors: Electronic and Structural Effects
TL;DR: In this paper, the synthesis, spectroscopy, and fluorescence quenching behavior of pentiptycene-derived phenyleneethynylene polymers, 1−3, are reported.
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Macromolecular electronic device: Field-effect transistor with a polythiophene thin film
TL;DR: In this paper, the first solid-state field-effect transistor has been fabricated utilizing a film of an organic macromolecule, polythiophene, as a semiconductor.
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Field‐effect mobility of poly(3‐hexylthiophene)
TL;DR: In this paper, a field effect transistor structure was used to study the transport properties of poly(3−hexylthiophene) and showed that the field effect mobility was 10−5−10−4 cm2/V