Journal ArticleDOI
Explosive vapor sensor using poly (3-hexylthiophene) and CuII tetraphenylporphyrin composite based organic field effect transistors
Ravishankar S. Dudhe,Shree Prakash Tiwari,Harshil N. Raval,Mrunal A. Khaderbad,Rahul Singh,Jasmine Sinha,M. Yedukondalu,Mangalampalli Ravikanth,Anil Kumar,V. Ramgopal Rao +9 more
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TLDR
In this paper, organic field effect transistors based on poly(3-hexylthiophene) and CuII tetraphenylporphyrin composite were investigated as sensors for detection of vapors of nitro-based explosive compounds.Abstract:
Organic field effect transistors based on poly(3-hexylthiophene) and CuII tetraphenylporphyrin composite were investigated as sensors for detection of vapors of nitrobased explosive compounds, viz., 1,3,5-trinitro-1,3,5-triazacyclohexane (RDX), 2,4,6-trinitrotoluene (TNT), and dinitrobenzene, which are also strong oxidizing agents. Significant changes, suitable for sensor response, were observed in transistor “on” current (Ion) and conductance (S) after exposure. A similar device response was, however, not observed for oxidizing agents such as benzoquinone and benzophenone. The Fourier transform infrared spectrometry experiments supported the results, where exposure to RDX and TNT vapors resulted in a significant shift in IR peaks.read more
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Trace Detection of RDX, HMX and PETN Explosives Using a Fluorescence Spot Sensor.
TL;DR: The fluo-spot approach, which can be employed for in situ detection of trace amount of explosives, is presented, which demonstrated high selectivity towards RDX, HMX and PETN, as no significant fluorescence quenching was observed for other chemical compounds.
Journal ArticleDOI
Fluorescent turn-off based sensing of nitrated explosives using porphyrins and their Zn( ii )-derivatives
Anup Rana,Pradeepta K. Panda +1 more
TL;DR: A series of porphyrins and their corresponding Zn(II)-derivatives possessing both electron donating and electron withdrawing substituents at their periphery, have been investigated for the detection of nitrated explosives, which includes nitroaromatics, plastic explosive taggant (DMNB) and explosive nitramines (RDX and HMX), using a fluorescence turn-off mechanism.
Journal ArticleDOI
Response diversity and dual response mechanism of organic field-effect transistors with dinitrotoluene vapor
TL;DR: In this paper, an assortment of n-and p-channel organic semiconductors are employed to fabricate organic field effect transistors (OFETs) that respond in different ways to DNT vapor.
Journal ArticleDOI
High performance nitrogen dioxide sensor based on organic field-effect transistor utilizing ultrathin CuPc/PTCDI-C8 heterojunction
TL;DR: In this paper, an organic field effect transistors (OFET) with a heterojunction structure, consisting of the p-type and n-type organic semiconducting materials of copper phthalocyanine (CuPc) and the dioctyl perylene tetracarboxylic diimide (PTCDI-C8), were fabricated.
Journal ArticleDOI
Metalloporphyrin-functionalised diamond nano-particles as sensitive layer for nitroaromatic vapours detection at room-temperature
E. Chevallier,Emmanuel Scorsone,Hugues A. Girard,Vincent Pichot,Denis Spitzer,Philippe Bergonzo +5 more
TL;DR: In this paper, a new sensitive coating for surface acoustic wave transducers based on diamond nano-particles functionalised with a zinc porphyrin complex is investigated for the detection of nitroaromatic vapours.
References
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Rothemund and Adler-Longo reactions revisited: synthesis of tetraphenylporphyrins under equilibrium conditions
TL;DR: In this article, a new synthetic strategy for preparing tetraphenylporphyrins is presented, which should greatly expand synthetic entries into porphyrin-containing model systems, and is complementary to the Adler-Longo procedure.
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Fluorescent Porous Polymer Films as TNT Chemosensors: Electronic and Structural Effects
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TL;DR: In this paper, the first solid-state field-effect transistor has been fabricated utilizing a film of an organic macromolecule, polythiophene, as a semiconductor.
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Field‐effect mobility of poly(3‐hexylthiophene)
TL;DR: In this paper, a field effect transistor structure was used to study the transport properties of poly(3−hexylthiophene) and showed that the field effect mobility was 10−5−10−4 cm2/V