Proceedings ArticleDOI
Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities
Vinayak Bharat Naik,K. Yamane,J. Kwon,Behtash Behin-Aein,N. L. Chung,R. Chao,C. Chiang,Y. Huang,L. Pu,Yuichi Otani,S. H. Jang,N. Balasankaran,Wah-Peng Neo,Tan Yun Ling,J. W. Ting,Hongsik Yoon,Johannes Müller,B. Pfefferling,O. Kallensee,T. Merbeth,Chim Seng Seet,J. Wong,Y. S. You,Steven R. Soss,T. H. Chan,Soh Yun Siah +25 more
- pp 6B.3-1
TLDR
In this article , the authors present a reliable magnetic tunnel junction (MTJ) TDDB model using 40Mb 22FDX® STT-MRAM at sub-PPM failure rate.Abstract:
We present a reliable magnetic tunnel junction (MTJ) TDDB model using 40Mb 22FDX® STT-MRAM at sub-PPM failure rate. This model is based on the precise estimation of voltage across MTJ at bit-cell level derived from compact model and design simulations to cover the product level endurance performance from MTJ diameter, resistance-area product, and temperature effects. We discuss the implications of pre/post MTJ switching, circuit variations and write pulse on MRAM endurance. By using design-process-test co-optimization, we show robust MRAM product reliability to meet >1M cycles with solder reflows and path towards achieving >E12 cycles for cache applications.read more
Citations
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Proceedings ArticleDOI
Smart Hammering: A practical method of pinhole detection in MRAM memories
TL;DR: In this paper , the behavior of pinholes is studied and a cost-effective testing scheme is proposed to capture pinhole defects and increase the reliability of the end product of Spin-Transfer Torque Magnetic Random Access Memories (STT-MRAM).
Proceedings ArticleDOI
Full reliability characterization of three-terminal SOT-MTJ devices and corresponding arrays
Xinyi Xu,Hongchao Zhang,Chuanpeng Jiang,Jinhao Li,Shiyang Lu,Yunpeng Li,Honglei Du,Zhaohao Wang,Kaihua Cao,Weisheng Zhao,Shuqin Lyu,Bowen Man,Cong Zhang,Dandan Li,Shuhui Li,Xiaofei Fan,Gefei Wang +16 more
TL;DR: In this article , the reliability performance of spin-orbit torque (SOT) magnetic random access memory (MRAM) devices, including electromigration (EM), stress migration (SM), endurance and data retention, was investigated.