Journal ArticleDOI
Extraction of Schottky diode parameters from forward current-voltage characteristics
S. K. Cheung,N. W. Cheung +1 more
TLDR
In this article, the forward current densityvoltage (J•V) characteristics of a Schottky diode were used to determine the ideality factor n, the barrier height φB, and the series resistance R of the diode with one single I•V measurement.Abstract:
It is shown that by using the forward current density‐voltage (J‐V) characteristics of a Schottky diode, a plot of d(V)/d(ln J) vs J and a plot of the function H(J) vs J, where H(J)≡V−n(kT/q)ln(J/A**T2), will each give a straight line. The ideality factor n, the barrier height φB, and the series resistance R of the Schottky diode can be determined with one single I‐V measurement. This procedure has been used successfully to study thermal annealing effects of W/GaAs Schottky contacts.read more
Citations
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Journal ArticleDOI
High Efficiency Graphene Solar Cells by Chemical Doping
Xiaochang Miao,Sefaattin Tongay,Maureen K. Petterson,Kara Berke,Andrew G. Rinzler,Bill R. Appleton,Arthur F. Hebard +6 more
TL;DR: This performance, achieved by doping the graphene with bis(trifluoromethanesulfonyl)amide, exceeds the native (undoped) device performance by a factor of 4.5 and is the highest PCE reported for graphene-based solar cells to date.
Journal ArticleDOI
Planar-integrated single-crystalline perovskite photodetectors
Makhsud I. Saidaminov,Valerio Adinolfi,Riccardo Comin,Ahmed L. Abdelhady,Wei Peng,Ibrahim Dursun,Mingjian Yuan,Sjoerd Hoogland,Edward H. Sargent,Osman M. Bakr +9 more
TL;DR: Large-area planar-integrated films made up of large perovskite single crystals are produced, showing mobility and diffusion length comparable with those of single crystals, and a high-performance light detector is produced.
Journal ArticleDOI
Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
TL;DR: A review of the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications can be found in this article.
Journal ArticleDOI
Schottky barrier and pn-junction I/V plots — Small signal evaluation
TL;DR: In this paper, the authors proposed and examined three different plots for the determination of the saturation current, the ideality factor, and the series resistance of Schottky diodes and solar cells from the measurement of a single current (I)/voltage (V) curve.
Journal ArticleDOI
Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction
TL;DR: A review of the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications can be found in this article.
References
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Journal ArticleDOI
A modified forward I‐V plot for Schottky diodes with high series resistance
TL;DR: In this article, it was shown that a reliable value of the barrier height can be obtained even if there is a series resistance which would hamper the evaluation of the standard lnI•vs•V plot.
Journal ArticleDOI
Study of forward I‐V plot for Schottky diodes with high series resistance
K. Sato,Y. Yasumura +1 more
TL;DR: In this paper, the currentvoltage characteristics of Schottky barrier diodes with series resistance were investigated and it was shown that by using Norde's function F(V)=V/2−(kT/q)ln(I/SAT2) at two different temperatures, barrier height, n−value or ideality factor, and series resistance can be determined even in the case 1