Journal ArticleDOI
Fabrication and properties of a solar-blind ultraviolet photodetector based on Si-doped β-Ga2O3 film grown on p-Si (111) substrate by MOCVD
TLDR
In this paper, a solar-blind ultraviolet photodetector based on p-Si/n-β-Ga2O3:Si heterojunction, using the Si-doped β-Ga 2O3 as the n-type layer, was fabricated successfully by metal-organic chemical vapor deposition (MOCVD).About:
This article is published in Optik.The article was published on 2021-11-01. It has received 6 citations till now. The article focuses on the topics: Responsivity & Photodetector.read more
Citations
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Journal ArticleDOI
Growth and characterization of Si-doped Ga2O3 thin films by remote plasma atomic layer deposition: Toward UVC-LED application
Xiao-Ying Zhang,Yue Yang,Wei-Hang Fan,Chen Wang,Wan Yu Wu,Ming Chun Tseng,Dong-Sing Wuu,Peng Gao,Hao-Chung Kuo,Shui-Yang Lien,Wen-Zhang Zhu +10 more
TL;DR: In this paper , the effect of Si-doped concentration from 0 to 20% on the qualities of the Ga2O3 thin films were studied, and the experimental results showed that Ga2 o3 thin film growth per cycle increases slightly with the various cycle ratio at the same total cycles of about 600.
Journal ArticleDOI
Fabrication and properties of N-doped top layer of Ga2O3 films by magnetron sputtering
Ning Zhang,Yongsheng Wang,Zihao Chen,Bing Zhou,Jie Gao,Yanxia Wu,Yong Ma,Hongjun Hei,Shengwang Yu +8 more
TL;DR: In this paper , the properties of N-doped top-layer β-Ga2O3 films were studied by XRD, XPS, SEM, UV-VIS and PL.
Journal ArticleDOI
Anisotropic Performances and Bending Stress Effects of the Flexible Solar-Blind Photodetectors Based on β-Ga2O3 (100) Surface
TL;DR: In this article , a flexible solar-blind photodetector with the channels in various orientations on β -Ga 2 O 3 (100) surface was fabricated, which exhibits obvious anisotropy and bending stress response.
References
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Journal ArticleDOI
Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction
Daoyou Guo,Daoyou Guo,Han Liu,Peigang Li,Peigang Li,Zhenping Wu,Shunli Wang,Can Cui,Chaorong Li,Weihua Tang,Weihua Tang +10 more
TL;DR: The results strongly suggest that a photodetector based on β-Ga2O3 thin-film heterojunction structure can be practically used to detect weak solar-blind signals because of its high photoconductive gain.
Journal ArticleDOI
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
TL;DR: In this paper, the growth of ultrawide bandgap β-Ga2O3 thin films on c-plane sapphire substrates by low pressure chemical vapor deposition is demonstrated.
Journal ArticleDOI
α-Ga2O3 Nanorod Array–Cu2O Microsphere p–n Junctions for Self-Powered Spectrum-Distinguishable Photodetectors
Chenran He,Daoyou Guo,Daoyou Guo,Kai Chen,Shunli Wang,Jingqin Shen,Nie Zhao,Aiping Liu,Yingying Zheng,Peigang Li,Zhenping Wu,Chaorong Li,Fengmin Wu,Weihua Tang +13 more
TL;DR: Most of the photodetectors can measure all of the light illumination with a wavelength below the absorption edge of the detector materials, while they cannot distinguish the different waveband.
Journal ArticleDOI
Development of solar-blind photodetectors based on Si-implanted β-Ga 2 O 3
TL;DR: The fabricated solar-blind photodetectors exhibited photoresponse to 254 nm wavelength, and blindness to 365 nm light, with a high spectral selectivity.
Journal ArticleDOI
Vertical α/β-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors
Chao Wu,Chenran He,Daoyou Guo,F. B. Zhang,Peigang Li,S. L. Wang,Aiping Liu,Fengmin Wu,Weihua Tang +8 more
TL;DR: In this article, a solar-blind photodetector based on Ga2O3 pn junction nanorod arrays (NRAs) with a graphene-silver nanowires (Ag NWs) hybrid top electrode was proposed.