Journal ArticleDOI
Fabrication of diode arrays for photovoltaic characterization of silicon substrates
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TLDR
In this paper, a simple process sequence for the fabrication of passivated mesa diode arrays for photovoltaic characterization of single/polycrystalline silicon substrates is described.Abstract:
A simple process sequence for the fabrication of passivated mesa diode arrays for photovoltaic characterization of single/polycrystalline silicon substrates is described. These diodes are used to measure a variety of substrate and cell parameters including resistivity, minority‐carrier diffusion length, Voc, Jsc, fill factor, and current‐voltage characteristics for analysis of the electronic transport properties. Evaluation techniques which use these diodes for determining spatial variations in the material/device charateristics are described. These devices are also suitable for characterizing various cell fabrication processes and for analysis of crystal defects on the solar cell characteristics.read more
Citations
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Loss analysis of crystalline silicon solar cells using photoconductance and quantum efficiency measurements
TL;DR: In this article, the authors reduced the three-dimensional transport in solar cells with periodically arranged rear point contacts to a one-dimensional calculation and derived an approximation for the series resistance.
PatentDOI
Back-side hydrogenation technique for defect passivation in silicon solar cells
TL;DR: In this paper, a two-step back-side hydrogenation process is described, which includes first bombarding the back side of the silicon substrate with hydrogen ions with intensities and then illuminating the substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate.
Journal ArticleDOI
Evaluation of Local Electrical Parameters of Solar Cells by Dynamic (Lock-In) Thermography
TL;DR: In this article, the authors used dynamic contact thermography to measure the local current flow through biased solar cells, which reveals the locations limiting the open circuit voltage and the fill factor of solar cells.
Patent
Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination
TL;DR: In this article, the authors present a method for simultaneous sintering of metal strips and alloying a metal layer on opposite surfaces of the substrate at different temperatures by directing infrared radiation through the top surface to the interface of the bottom surface with the metal layer.
Journal ArticleDOI
Efficiency Limitations of Multicrystalline Silicon Solar Cells Due to Defect Clusters
TL;DR: In this article, the authors show that the efficiency loss caused by defect clusters can exceed 3-4 absolute points in the case of multi-rystalline Si wafers.
References
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Journal ArticleDOI
A New Defect Etch for Polycrystalline Silicon
TL;DR: In this article, a methode d'attaque isotrope is presented for the detection of defauts in le silicium polycristallin (SPCA).
Journal ArticleDOI
Damage‐Free Polishing of Polycrystalline Silicon
Journal ArticleDOI
Crystal defects in RTR ribbons: Their characteristics and influence on the ribbon cell performance
TL;DR: In this paper, a relationship between dislocation density and cell performance is presented, where the authors discuss the nature of these defects and how they influence the cell characteristics and show that the defect is strongly controlled by the crystal defects generated by the thermal stresses during growth.
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