Journal ArticleDOI
Feasibility Study on High-Sensitivity Chemically Amplified Resist by Polymer Absorption Enhancement in Extreme Ultraviolet Lithography
TLDR
In this paper, the feasibility of a high-absorption resist process was investigated by a simulation based on EUV sensitization mechanisms, and it was shown that fourfold enhancement of polymer absorption is feasible without side wall degradation, although it is necessary to reduce the resist thickness to 20 nm.Abstract:
The strong photoabsorption of typical backbone polymers such as poly(4-hydroxystyrene) (PHS) has been a concern in extreme ultraviolet (EUV) lithography. The development of highly sensitive chemically amplified resists by polymer absorption enhancement seems an unacceptable strategy for overcoming this problem because the side wall angle is basically determined by the gradient of energy absorption, namely the absorption coefficient of the polymer. In this study, the feasibility of a high-absorption resist process was investigated by a simulation based on EUV sensitization mechanisms. Compared with PHS-based resists, the fourfold enhancement of polymer absorption is feasible without side wall degradation partly due to the long migration range of secondary electrons, although it is necessary to reduce the resist thickness to 20 nm.read more
Citations
More filters
Journal ArticleDOI
Radiation Chemistry in Chemically Amplified Resists
Takahiro Kozawa,Seiichi Tagawa +1 more
TL;DR: In this article, the authors review the radiation chemistry of materials related to chemically amplified resist materials and discuss the imaging mechanisms from energy deposition to proton migration in resist materials are discussed.
Journal ArticleDOI
Resist Materials and Processes for Extreme Ultraviolet Lithography
Toshiro Itani,Takahiro Kozawa +1 more
TL;DR: In this article, the resist materials and processes among the key technologies of extreme ultraviolet (EUV) lithography are reviewed and the focus of the development has shifted to the 16 nm node and beyond.
Journal ArticleDOI
Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography
TL;DR: In this article, the authors demonstrated that resist parameters (namely, quencher concentration, acid diffusion constant, proportionality constant of line edge roughness, and dissolution point) can be extracted from the scanning electron microscopy (SEM) images of patterned resists without the knowledge on the details of resist contents using two types of latest EUV resist.
Journal ArticleDOI
Analysis of Stochastic Effect in Line-and-Space Resist Patterns Fabricated by Extreme Ultraviolet Lithography
TL;DR: In this article, resist patterns were analyzed using a Monte Carlo simulation on the basis of the sensitization and reaction mechanisms of chemically amplified EUV resists and the contribution of protected unit fluctuation to line edge roughness was estimated to be ±0.31 to ± 0.37σ.
Journal ArticleDOI
Super High Sensitivity Enhancement by Photo-Sensitized Chemically Amplified Resist (PS-CAR) Process
TL;DR: In this article, the authors proposed a method for increasing the resist sensitivity by combining the lithography of 1 EUV pattern exposure with a 2 UV flood exposure (PF combination lithography) and a photosensitized chemically amplified resist (PS-CAR).
References
More filters
Journal ArticleDOI
X-Ray Interactions: Photoabsorption, Scattering, Transmission, and Reflection at E = 50-30,000 eV, Z = 1-92
TL;DR: In this article, the atomic scattering factors for all angles of coherent scattering and at the higher photon energies are obtained from these tabulated forward-scattering values by adding a simple angle-dependent form-factor correction.
Journal ArticleDOI
Calculations of electron inelastic mean free paths. III. Data for 15 inorganic compounds over the 50–2000 eV range
TL;DR: In this article, the electron inelastic mean free paths (IMFPs) of 14 organic compounds were computed for a group of 14 compounds: 26-n-paraffin, adenine, β-carotene, bovine plasma albumin, deoxyribonucleic acid, diphenylhexatriene, guanine, kapton, polyacetylene, poly(butene-1-sulfone), polyethylene, polymethylmethacrylate, polystyrene and poly(2-vinyl
Proceedings ArticleDOI
Resist blur and line edge roughness (Invited Paper)
TL;DR: In this article, a straightforward analytic model of resist line edge roughness is presented which predicts all the known scaling laws as well as the shape of the experimentally seen frequency content or power spectrum of the roughness.
Journal ArticleDOI
Photochemistry of triarylsulfonium salts
John L. Dektar,Nigel P. Hacker +1 more
TL;DR: In this article, the photolysis of triphenylsulfonium, tris(4-methylphenyl)sulmonohexylsulonium (TMS), tris (4-chlorophenyl) sulfonium and disubstituted triarylsulfoniam salts was examined in solution, and it was found that direct irradiation of triaryl-soulonium salts produced new rearrangement products, phenylthiobiphenyl, along with diphenyl sulfide.
Journal ArticleDOI
Radiation-Induced Acid Generation Reactions in Chemically Amplified Resists for Electron Beam and X-Ray Lithography
TL;DR: In this article, the radiation-induced reactions of onium salts in some kinds of solutions and model compound solutions of chemically amplified electron beam (EB) and X-ray resists have been studied by means of picosecond and nanosecond pulse radiolysis.