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Feature length-scale modeling of LPCVD & PECVD MEMS fabrication processes.
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TLDR
In this article, a level set based feature-scale model for low-pressure and plasma enhanced chemical vapor deposition (LPCVD, LPCVD and PECVD) is presented.Abstract:
The surface micromachining processes used to manufacture MEMS devices and integrated circuits transpire at such small length scales and are sufficiently complex that a theoretical analysis of them is particularly inviting. Under development at Sandia National Laboratories (SNL) is Chemically Induced Surface Evolution with Level Sets (ChISELS), a level-set based feature-scale modeler of such processes. The theoretical models used, a description of the software and some example results are presented here. The focus to date has been of low-pressure and plasma enhanced chemical vapor deposition (low-pressure chemical vapor deposition, LPCVD and PECVD) processes. Both are employed in SNLs SUMMiT V technology. Examples of step coverage of SiO{sub 2} into a trench by each of the LPCVD and PECVD process are presented.read more
Citations
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Journal ArticleDOI
Multi-scale modeling of chemical vapor deposition processes for thin film technology
TL;DR: In this paper, a review of the developments in comprehensive multi-scale simulation of CVD processes and equipment is described and illustrated with examples from the work performed in the authors' group.
Journal ArticleDOI
Integrated framework for the flux calculation of neutral species inside trenches and holes during plasma etching
TL;DR: An integrated framework for the neutral flux calculation inside trenches and holes during plasma etching is described, and a comparison between the two types of structure in a number of applications is presented as discussed by the authors.
Journal ArticleDOI
Sacrificial layers for air gaps in NEMS using alucone molecular layer deposition
Dragos Seghete,B.D. Davidson,Robert A. Hall,Yuan-Jen Chang,Victor M. Bright,Steven M. George +5 more
TL;DR: In this paper, a molecular layer deposition approach is reported that produces a new class of hybrid organic-inorganic thin films, which display typical atomic layer deposition characteristics: controllable linear growth, conformality, low roughness, and uniform composition.
Journal ArticleDOI
Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms
I. Savin de Larclause,Thierry Paulmier,I. Enache,Hubert Caquineau,Patrice Raynaud,Françoise Massines,Nicolas Gherardi +6 more
TL;DR: In this article, homogeneous and dense silicon-based coatings have been deposited from hexamethyldisiloxane (HMDSO: Si2O(CH3)6) on patterned silicium in a Townsend dielectric barrier discharge operating at atmospheric pressure.
Journal ArticleDOI
Feature scale modeling of pulsed plasma-enhanced chemical vapor deposition
Sanket S. Kelkar,Colin A. Wolden +1 more
TL;DR: In this paper, a two dimensional feature scale model was developed to predict film profile evolution during pulsed plasma enhanced chemical vapor deposition (PECVD) of aluminum oxide on patterned substrates.
References
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Book ChapterDOI
Level Set Methods
TL;DR: This chapter shall give an overview of the numerical technology and of applications in imaging science, which will include surface interpolation, solving PDE’s on manifolds, visibility, ray tracing, segmentation (including texture segmentation) and restoration.
Journal ArticleDOI
Modeling of SiO2 deposition in high density plasma reactors and comparisons of model predictions with experimental measurements
Ellen Meeks,Richard S. Larson,Pauline Ho,Christopher A. Apblett,Christopher A. Apblett,Sang M. Han,Erik A. Edelberg,Eray S. Aydil +7 more
TL;DR: In this article, a list of gas-phase and surface reactions has been compiled for modeling plasma-enhanced chemical vapor deposition of SiO2 from SiH4, O2, and Ar gas mixtures in high-density-plasma reactors.
Journal ArticleDOI
Laser-Induced Fluorescence Measurements and Kinetic Analysis of Si Atom Formation in a Rotating Disk Chemical Vapor Deposition Reactor
TL;DR: An extensive set of laser-induced fluorescence (LIF) measurements of Si atoms during the chemical vapor deposition (CVD) of silicon from silane and disilane in a research rotating disk reactor are presented in this article.
Journal ArticleDOI
Multi-scale modeling of chemical vapor deposition processes for thin film technology
TL;DR: In this paper, a review of the developments in comprehensive multi-scale simulation of CVD processes and equipment is described and illustrated with examples from the work performed in the authors' group.
Journal ArticleDOI
A Fast Modular Semi-Lagrangian Method for Moving Interfaces
TL;DR: Numerical results show that the method computes accurate viscosity solutions to a wide variety of difficult geometric moving interface problems involving merging, anisotropy, faceting, nonlocality, and curvature.