Journal ArticleDOI
First Principles Calculation of Band Offsets and Defect Energy Levels in Al₂O₃/β-Ga₂O₃ Interface Structures with Point Defects
Junsung Park,Sung-Min Hong +1 more
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This article is published in Journal of Semiconductor Technology and Science.The article was published on 2019-08-31. It has received 3 citations till now.read more
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Analytical electron microscopy of ( 2 ¯ 01) β-Ga2O3/SiO2 and ( 2 ¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors
Christopher J. Klingshirn,Asanka Jayawardena,Sarit Dhar,Rahul P. Ramamurthy,Dallas T. Morisette,Tsvetanka Zheleva,Aivars J. Lelis,Lourdes Salamanca-Riba +7 more
TL;DR: In this paper, cross-sectional transmission electron microscopy at the Ga 2O 3/SiO 2 interface revealed nanoscale interfacial roughness increasing with higher post-deposition annealing temperature.
Journal ArticleDOI
DFT calculations of optoelectronic properties of cubic $$\left( {{\text{In}}_{1 - x} {\text{Al}}_{x} } \right)_{2} {\text{O}}_{3}$$ In 1 - x Al x 2 O 3 alloys
TL;DR: In this article, the effect of alloying with aluminum metal on the structural parameters, energy bandgap, and electron effective mass of ternary alloys was investigated, and the optical results showed an improvement in the optical transparency of the studied alloys in the infrared and visible ranges as the Al content is increased.
Low Interface Trapped Charge Density for AlO/β-GaO (001) Metal-Insulator-Semiconductor Capacitor
TL;DR: In this letter, high-performance Al2O3/ $\beta$ -Ga2O 3 (001) metal-insulator-semiconductor (MIS) capacitor has been demonstrated.