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Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-Ni Si 2 Epitaxial Structures

Raymond T. Tung, +2 more
- 07 Feb 1983 - 
- Vol. 50, Iss: 6, pp 429-432
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This article is published in Physical Review Letters.The article was published on 1983-02-07. It has received 375 citations till now. The article focuses on the topics: Single crystal & Silicide.

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Recent advances in Schottky barrier concepts

TL;DR: Theoretical models of Schottky-barrier height formation are reviewed in this paper, with a particular emphasis on the examination of how these models agree with general physical principles, and new concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.
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The physics and chemistry of the Schottky barrier height

TL;DR: The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface as mentioned in this paper.
Journal ArticleDOI

Ion beam crystallography of surfaces and interfaces

TL;DR: The current status of Rutherford Backscattering Spectrometry (RBS) of surfaces and interfaces is reviewed in this article, along with a variety of Monte Carlo methods for computer simulation of the shadowing and blocking experiments.
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Mesotaxy: single-crystal growth of buried CoSi2 layers

TL;DR: In this paper, single-crystal CoSi2 layers in silicon have been formed by high dose implantation of cobalt followed by annealing, and electrical transport measurements on the layers give values for the resistance ratios and superconducting critical temperatures that are better than the best films grown by conventional techniques.
Journal ArticleDOI

Nucleation of a new phase from the interaction of two adjacent phases: Some silicides

TL;DR: In this paper, a class of reactions where nucleation dominates the formation of a new phase is discussed, and a salient feature of these reactions is the absence of any equilibrium temperature, although the nucleation temperatures are relatively well defined within narrow limits.
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