Journal ArticleDOI
Growth of single‐crystal CoSi2 on Si(111)
TLDR
In this paper, singlecrystal CoSi2 films were grown under ultrahigh vacuum conditions on Si (111) by both standard deposition and molecular beam epitaxy techniques and analyzed by Rutherford backscattering spectroscopy and channeling, transmission electron microscopy, and low energy electron diffraction.Abstract:
Single‐crystal CoSi2 films have been grown under ultrahigh vacuum conditions on Si (111) by both standard deposition and molecular beam epitaxy techniques. Films were analyzed by Rutherford backscattering spectroscopy and channeling, transmission electron microscopy, and low energy electron diffraction. The films are free of grain boundaries but are rotated 180° about the normal to the Si surface. The crystalline perfection, as measured by channeling, is the best yet reported for an epitaxial silicide system. The expected hexagonal misfit dislocation arrays, along with a coarser triangular defect structure, are confined to the plane of the interface.read more
Citations
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Journal ArticleDOI
The physics and chemistry of the Schottky barrier height
TL;DR: The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface as mentioned in this paper.
Journal ArticleDOI
Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
TL;DR: In this article, the Schottky-barrier heights of NiSi2layers grown under ultrahigh-vacuum conditions on n-type Si(111) are found to be 0.65 and 0.79 eV for type-A and type-Bepitaxial systems, respectively.
Journal ArticleDOI
Silicon molecular beam epitaxy
TL;DR: The silicon molecular beam epitaxy (MBE) technique has only been used in silicon device applications in the last 5 years as discussed by the authors, and it is expected that in the near future silicon MBE will be applied to a much wider range of silicon devices including silicon integrated circuits.
Journal ArticleDOI
Growth of epitaxial CoSi2 on (100)Si
TL;DR: A bilayer CoSi2/TiN has been grown on (100)Si, starting from a (100 p) type Si wafer deposited with thin layers of Ti followed by Co metal, through a two-stage annealing in a nitrogen environment and an intervening etch.
Book ChapterDOI
Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
TL;DR: In this paper, NiSi2 films are grown on Si(100) and (111) by ultrahigh-vacuum techniques, and the orientation of the silicide can be controlled by the initial Ni thickness.
References
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Journal ArticleDOI
Thin Films—Interdiffusion and Reactions
Journal ArticleDOI
Refractory silicides for integrated circuits
TL;DR: In this paper, various properties and the formation techniques of transition metal silicides have been reviewed and relations between the various properties of the metal or silicide electronic or crystallographic structure have been made to predict the more useful silicides for SIC applications.
Journal ArticleDOI
Interactions in the Co/Si thin‐film system. I. Kinetics
TL;DR: In this paper, the Co/Si thin-film system was investigated by MeV backscattering and x-ray-diffraction techniques and it was found that Si diffuses through the Co layer and accumulates at the sample surface at about 300°C.
Journal ArticleDOI
Double heteroepitaxy in the Si (111)/CoSi2/Si structure
TL;DR: In this paper, the growth of CoSi2 films on Si substrates and Si films on the Si(111)/CoSi2 structure are investigated and two dominant factors required to obtain good epitaxial films are substrate cleaning by lamp heating before the film deposition and annealing of the deposited films without exposure to air.
Journal ArticleDOI
Silicon/metal silicide heterostructures grown by molecular beam epitaxy
John C. Bean,J. M. Poate +1 more
TL;DR: In this article, NiSi2 and CoSi2 layers have been grown on crystalline silicon by molecular beam epitaxy (MBE) and shown to be highly crystalline films can be grown by either silicon-metal codeposition or by pure metal deposition on substrates heated to 550-800°C.
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Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-Ni Si 2 Epitaxial Structures
Silicon/metal silicide heterostructures grown by molecular beam epitaxy
John C. Bean,J. M. Poate +1 more