Proceedings ArticleDOI
Fully-integrated ZnO on silicon pyroelectric infrared detector array
D.L. Polla,Richard S. Muller,Richard M. White +2 more
- Vol. 30, pp 382-384
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TLDR
In this article, a 64-element, pyroelectric infrared detector array, fabricated on a thin-membrane structure by combining ZnO thin-film deposition technology, NMOS planar processing, and anisotropic backside etching of silicon is described.Abstract:
A fully-integrated, 64-element, pyroelectric infrared-detector array, fabricated on a thin-membrane structure by combining ZnO thin-film deposition technology, NMOS planar processing, and anisotropic backside etching of silicon is described. Incident thermal radiation on individual detector elements is sensed by the temperature change in a structure composed of a ZnO pyroelectric capacitor encapsulated in silicon dioxide and supported by a 25 µm-thick silicon membrane. Thai measured black-body responsivity at temperature T=300 K and frequency f=24 Hz is 4.3 × 104VW-1with a corresponding measured detectivity D*=3.1 × 107cm √ HzW-1.read more
Citations
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A silicon-thermopile-based infrared sensing array for use in automated manufacturing
Il Hyun Choi,Kensall D. Wise +1 more
TL;DR: In this paper, the authors describe a low-cost infrared detector array that has been realized using standard silicon MOS process technology and micromachining, which uses thermopiles as infrared detecting elements and multiple layers of silicon oxide and silicon nitride.
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Integrated multisensor chip
TL;DR: In this article, a multipurpose integrated-sensor chip has been fabricated for simultaneous measurement of physical and chemical variables, which uses pyroelectdc and piezoelectric effects in ZnO thin films.
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Analysis of noise margin and speed of GaAs MESFET DCFL using UM-SPICE
C.H. Hyun,M.S. Shur,A. Peczalski +2 more
TL;DR: In this paper, the design trade-offs and process sensitivity of the logic levels, noise margin, and propagation delay for GaAs direct coupled field effect logic (DCFL) gates are analyzed.
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Silicon sensor technologies
TL;DR: In this article, the authors describe several exciting new devices and sensor structures which are now on a fast development track within the sensor community and will be the forerunners of new generations of advanced sensor technologies and will alter the way we think about all types of miniature mechanical devices and components.
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Integrated Zinc oxide-on-silicon tactile-sensor array
TL;DR: In this paper, a 64-element piezoelectric tactile-sensor array, integrated on a silicon chip, has been fabricated and tested, which consists of 1 1µm-thick sputtered ZnO capacitors in an 8 × 8 matrix.
References
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Journal ArticleDOI
Pyroelectric detectors and materials
TL;DR: A survey on point pyroelectric detectors and materials is given in this article, where the performance of a practical detector is characterized by the ratio of a response function and a noise function.
Book ChapterDOI
Chapter 6 The Pyroelectric Detector
TL;DR: In this paper, the authors discuss the use of pyroelectric detectors as a means of detecting infrared radiation in the presence of thermal and electrical properties, and calculate the performance of such detectors.
Journal ArticleDOI
Critical assessment of pyroelectric detectors
TL;DR: In this article, a critical assessment of the pyroelectric detector is given and an optimal procedure to reach the practical performance limit defined by material thermal noise is presented, where the temperature dependent characteristics of the detector are described and the figure-of-merit is discussed.
Proceedings ArticleDOI
Monolithic integrated zinc-oxide on silicon pyroelectric anemometer
TL;DR: In this paper, thin films of pyroelectric ZnO have been combined wlth NMOS planar tech nology to produce a fully integrated anemometer, based on the differential cooling rate of two heat sensors placed up and downstream from a heat source.
Journal ArticleDOI
Heat and strain-sensitive thin-film transducers
TL;DR: In this paper, thin-film technologies for heat and strain sensing show considerable promise for direct integration with silicon integrated circuits, when combined with on-chip processing of silicon micromechanical structures, wholly new design options for sensing systems can be considered.