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Gigahertz quantized charge pumping

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TLDR
In this article, the authors present a different pumping mechanism of single charges, whereby electrons "surf" as particles on a time-dependent potential instead of tunnelling through the barriers as waves.
Abstract
The high-speed, high-accuracy transport of single electrons in nanoscale devices is predicted to underpin future electronics. A key and topical application is the development of a fundamental standard of electrical current linking the ampere to the elementary charge and frequency. For a practical standard, currents at the nanoampere level are required, corresponding to gigahertz transport frequencies. Recent research has concentrated on transport using Coulomb blockade techniques. However, the tunnelling time of the electrons in such devices limits the operation to a few megahertz. We present a different pumping mechanism of single charges, whereby electrons ‘surf’ as particles on a time-dependent potential instead of tunnelling through the barriers as waves. This potential is created by two phase-shifted sinusoidal signals applied directly to metallic finger gates on an etched GaAs/AlGaAs quantum wire. Pumping accurate to better than 10−4, at a frequency up to 3.4 GHz, is reported with this approach.

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Citations
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Journal ArticleDOI

A Thouless quantum pump with ultracold bosonic atoms in an optical superlattice

TL;DR: In this article, the idea of a topological charge pump with topologically protected transport has been realized with ultracold bosonic atoms, where the quantized motion of charge due to the slow cyclic variation of a periodic potential has been quantized.
Journal ArticleDOI

Topological Thouless pumping of ultracold fermions

TL;DR: In this paper, the Thouless pump was demonstrated in a dynamically controlled optical superlattice with ultracold fermionic atoms and the topological invariance of the pumping process was analyzed.
Journal ArticleDOI

Coherence and Indistinguishability of Single Electrons Emitted by Independent Sources

TL;DR: The demonstration of two-Electron interference provides the possibility of manipulating coherent and indistinguishable single-electron wave packets in quantum conductors.
Journal ArticleDOI

Single-electron current sources: Toward a refined definition of the ampere

TL;DR: In this article, a review of the physical and technical constraints that influence single-electron charge transport is presented, and a broad variety of proposed realizations are presented, some of them have already proven experimentally to nearly fulfill the demanding needs, in terms of transfer errors and transfer rate, of quantum metrology of electrical quantities, whereas some others are currently "just" wild ideas, still often potentially competitive if technical constraints can be lifted.
Journal ArticleDOI

Towards a quantum representation of the ampere using single electron pumps

TL;DR: This work demonstrates that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially designed gate drive waveforms, and is a promising candidate for further development as a realization of the SI base unit ampere, following a redefinition of the amperes in terms of a fixed value of the elementary charge.
References
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Journal ArticleDOI

One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs Heterojunction

TL;DR: In this paper, the transport properties of the 2D electron gas in a narrow channel formed by the split gate of a GaAs-AlGaAs heterojunction field effect transistor were investigated.
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Frequency-locked turnstile device for single electrons

TL;DR: In this paper, an array of ultrasmall tunnel junctions which acts like a turnstile for single electrons was fabricated, and when alternating voltage of frequency f is applied to a gate, one electron is transferred per cycle through the device.
Journal ArticleDOI

Quantized current in a quantum-dot turnstile using oscillating tunnel barriers.

TL;DR: It is demonstrated that an integer number of electrons pass through the quantum dot each rf cycle, at integer multiples of ef, where f is the rf frequency.
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Single-Electron Pump Based on Charging Effects

TL;DR: In this article, a device consisting of three nanoscale tunnel junctions biased below the Coulomb gap was designed and operated, where phase shifted r.f. voltages of frequency f applied to two gates "pump" one electron per cycle through the device.
Journal ArticleDOI

Floquet scattering theory of quantum pumps

TL;DR: In this paper, the authors developed the Floquet scattering theory for quantum-mechanical pumping in mesoscopic conductors and investigated the nonequilibrium distribution function, the dc charge, and heat currents at arbitrary pumping amplitude and frequency.
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