Journal ArticleDOI
Growth and habit of GaSe crystals obtained from vapour by various methods
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TLDR
In this paper, the authors examined the advantages and drawbacks of different growth methods for GaSe single crystals obtained from vapour phase by using the following growth methods: (1) iodine transport; (2) closed tube sublimation; (3) sublimations under a vapour pressure of one of the components; (4) open tube sub-limation.About:
This article is published in Journal of Crystal Growth.The article was published on 1972-12-01. It has received 35 citations till now. The article focuses on the topics: Sublimation (phase transition) & Crystal habit.read more
Citations
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Properties of gallium selenide single crystal
TL;DR: In this article, a search of the published literature amassed over 630 articles and an attempt was made to organize this material by growth, structural and mechanical, thermal, electrical and optical properties.
Journal ArticleDOI
Far-infrared conversion materials: Gallium selenide for far-infrared conversion applications
Narsingh B. Singh,D. Suhre,V. Balakrishna,M. Marable,R. Meyer,Nils C. Fernelius,Frank Kenneth Hopkins,David E. Zelmon +7 more
TL;DR: In this paper, the authors used cylindrical, tapered, pyrolyzed and encapsulated ampoules to reduce the stress induced cracking of gallium selenide (GaSe).
Journal ArticleDOI
Charge transport in layer semiconductors
TL;DR: In this paper, electron and hole-drift velocity is measured in the layer semiconductors HgI2, GaSe, PbI2 and GaS, mainly on the direction parallel to the c-axis between 80 and 400 K.
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Photoelectronic properties of n-GaSe
TL;DR: In this paper, electron and hole trapping centers of GaSe(I2) grown by chemical transport method are investigated by using photoelectronic techniques, such as thermally stimulated current (TSC), thermal quenching of photoconductivity (TQ) and spectral response of photoconductorivity.
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Melt growth of single crystal ingots of GaSe by Bridgman-Stockbarger's method
TL;DR: In this article, it has been shown that the crystal perfection depends on the lowering rate and on the ampoule diameter, and that crystal orientation depends on bottom shape and the position of the AMO with respect to the furnace isotherms.
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Journal ArticleDOI
Crystal growth by chemical transport reactions—I Binary, ternary, and mixed-crystal chalcogenides
TL;DR: In this article, the concept of chemical transport reactions (volatilization of a material via a low-volatile chemical intermediate at a temperature T 1 and back-reaction of the mixture at T 2, using the temperature dependence of the chemical equilibrium involved) is used for growing single crystals of many materials which cannot be easily obtained from the melt.
Journal ArticleDOI
Photoconductivity of Gallium Selenide Crystals
Richard H. Bube,Edward L. Lind +1 more
TL;DR: The absorption edge of GaSe is at 6310 A, corresponding to a band gap of 1.97 ev; the temperature coefficient of band gap is about -4\ifmmode\times\else\texttimes\fi{}${10}^{\ensuremath{-}4}$ ev/deg as mentioned in this paper.