Patent
Halftone phase shifting mask blank, halftone phase shifting mask, and pattern transfer method
Hiroki Yoshikawa,Toshinobu Ishihara,Satoshi Okazaki,Yukio Inazuki,Tadashi Saga,Kimihiro Okada,Masahide Iwakata,Takashi Haraguchi,Mikio Takagi,Yuichi Fukushima +9 more
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TLDR
In this article, a halftone phase shift mask blank consisting of a substrate, a light absorbing film, and a phase shifter film is presented, where at least one layer of the phase shift film contains at least 90 atom% of silicon and a plurality of metal elements.Abstract:
In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom% of silicon and a plurality of metal elements, typically Mo and Zr or Hf.read more
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Patent
A tea making device having an improved liquid collection chamber
Paulus C. Duineveld,Henk Borg,Willem Sjouke Wijma,Cornelis Frederik Akerboom,Gustaaf Frans Brouwer,Hendrik Cornelis Koeling,Gerbrand Kristiaan De Graaf,Philippe Jacques Van Camp +7 more
TL;DR: A device for making tea, which comprises a brewing chamber (2) for enclosing a tea-pad, means for supplying heated water through one or more openings in the upper wall of the brewing chamber, and a restricted opening (8) in the lower wall (1), so that tea is squirted into a liquid collection chamber (10) underneath the brewing chambers as mentioned in this paper.
Patent
Method for manufacturing attenuated phase-shift masks and devices obtained therefrom
TL;DR: In this article, an attenuated phase shift mask suitable for hyper NA lithographic processing of a device was proposed, taking into account the effect of the numerical aperture of the lithographic system on which the mask is to be used.
Patent
Photomask blank and method for preparing photomask
TL;DR: In this paper, the resistivity and thickness of the conductive layer and the resistance layer are selected so as to meet a specific equation, and a ground can be established at a necessary fully low resistance value, and EB writing can be carried out at a high accuracy.
Patent
Method for preparing halftone phase shift mask blank, halftone phase shift mask blank, halftone phase shift mask, and thin film forming apparatus
TL;DR: In this paper, a halftone phase shift mask blank consisting of a transparent substrate and a HLS film is prepared through the step of depositing the HLS mask blank on the substrate by using a sputtering gas containing rare gas and nitrogen gas, and plural targets including at least two silicon targets, applying powers of different values to the silicon targets and rotating the substrate on its axis in a horizontal direction.
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Patent
Phase shift mask and phase shift mask blank
TL;DR: In this paper, a half-tone type phase shift mask blank is presented, in which a semi-transparent film is formed on a transparent substrate, and the semi transparent film serves to shift phase of a first optical light beam which directly transmits the transparent substrate and further, serves to reduce strength of the first light beam.
Patent
Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same
TL;DR: The halftone phase shift mask has an optical characteristic such that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion there between, thereby maintaining and improving an excellent contrast at the boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed as discussed by the authors.
Patent
Halftone phase shift mask, blank for the same, and methods of manufacturing these
TL;DR: In this article, a halftone film made of a zirconium compound target on a quartz glass substrate is placed in a DC or RF sputtering apparatus containing argon gas or oxygen gas.
Patent
Attenuating embedded phase shift photomask blanks
P. F. Carcia,Roger H. French +1 more
TL;DR: In this article, the authors propose an approach to aligning embedded phase shift photomask blanks capable of producing a phase shift of 180° and having an optical transmissivity of at least 0.001 at selected lithographic wavelengths < 400 nm.
Patent
Attenuated embedded phase shift photomask blanks
Marie Angelopoulos,Katherina Babich,S. Jay Chey,Michael S. Hibbs,Robert Lang,Arpan P. Mahorowala,Kenneth C. Racette +6 more
TL;DR: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen as mentioned in this paper.