Journal ArticleDOI
Hall mobility and field effect mobility studies on PbTe HWE thin films
TLDR
In this article, the authors used the standard Van der Pauw technique to obtain the Hall mobility and field effect mobility on PbTe films of different thickness grown on KCl (100) substrates by the hot wall epitaxy (HWE) technique.About:
This article is published in Applications of Surface Science.The article was published on 1985-05-01. It has received 1 citations till now. The article focuses on the topics: Electron mobility & Van der Pauw method.read more
Citations
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N-type to p-type transition upon phase change in Ge6Sb1Te2 compounds
TL;DR: In this paper, the electronic properties of Ge6Sb1Te2 compounds in thin-film transistor architectures on plastic substrates, which enable the extraction of field-effect mobility μFE, carrier density, and polarity in highly resistive thin-films were studied.
References
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Journal ArticleDOI
Hot wall epitaxy
TL;DR: In this article, a hot wall epitaxy approach is used to grow epitaxial layers under conditions as near as possible to thermodynamic equilibrium, which has achieved the development of high quality luminescent and electro-optic films of II-VI materials.
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High-Frequency Relaxation Processes in the Field-Effect Experiment
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Cross sections of midgap surface states in silicon by pulsed field effect experiment
TL;DR: In this paper, the cross sections and energy levels of surface states in silicon around midgap have been investigated by a pulsed field effect technique, and two energy levels have been found, one acceptorlike (A), the other one donor-like (D).
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Determination of the nitrogen doping of liquid phase epitaxy GaP and GaxIn1−xP alloys by optical absorption and photoluminescence
TL;DR: In this paper, optical absorption and photoluminescence have been used to determine the nitrogen concentration in liquid phase epitaxy GaP and GaxIn1−xP layers.
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Computer-aided study of hot wall epitaxy system using a Monte-Carlo technique
V. Ramachandran,P. R. Vaya +1 more
TL;DR: Theoretical analysis of PbTe molecular flow in hot wall epitaxy system has been made using a Monte-Carlo approach for free molecular flow Variation in transmission probabilities with the dimensions of the wall have been obtained as discussed by the authors.