Showing papers in "Thin Solid Films in 1975"

TL;DR: In this article, the displacement of noble gas atoms of Ar and Xe has been used as diffusion markers in growth studies of silicides formed by reacting metal films with silicon substrates, and two approaches were used: either the silicon samples were implanted with Xe or Ar and then covered with a thin layer of metal or the metal layer was implanted with the marker.

TL;DR: The phase Ni 2 Si has been found to form on reacting evaporated Ni films with Si single-crystal substrates at temperatures ranging from 200° to 325°C as discussed by the authors.

TL;DR: In this article, the authors identify and describe a number of factors which may cause diffusion in thin films to differ from the ordinary diffusion which occurs in bulk specimens at elevated temperatures, and discuss these factors in turn, with reference to experiment wherever possible.

TL;DR: In this article, the drift velocities per unit current density ranged between 10-13 and 10-15 cm3 A-1 s-1 and the gold motion was always in the direction of electron flow.

TL;DR: In this paper, the use of the indium chelate derived from dipivaloyl methane, in combination with dibutyl tin diacetate, has been investigated as a CVD technique for the preparation of transparent highly conducting layers of tin-doped indium oxide.

TL;DR: In this article, a semi-empirical model of the deposition rate during reactive sputtering of metals in atmospheres of oxygen and nitrogen in an argon plasma is presented.

TL;DR: The rate kinetics of the formation of compound phases from thin layers of 1000-1500 A α-Fe deposited onto single-crystal Si have been studied by MeV 4He+ backscattering spectrometry as mentioned in this paper.

TL;DR: In this paper, the authors present the methods for describing the evolution of irradiation defects as a function of temperature, defect rate production, sink density etc and discuss the equations which allow the diffusion coefficient under irradiation to be calculated.

TL;DR: In this paper, the activation energy Δ H for electrotransport in thin silver and gold films was measured by a resistometric technique involving several individual resistance measurements along a stripe, and the temperature of the center of the films was held constant during the entire experiment using a thin film thermocouple.

TL;DR: In this article, the method of reactive co-sputtering was used to determine the optimum dopant concentration for low resistivity In 2 O 3 /SnO 2 and SnO 2 /Sb 2 O 5 films.

TL;DR: In this paper, the dielectric properties of vacuum-deposited dysprosium oxide films have been studied in the audio-frequency range (102-104 Hz) at various temperatures (78-373 K).

TL;DR: The surface transport of atoms plays an important role in the growth of crystals from the vapor as mentioned in this paper, and using the field ion microscope it has been possible to establish quantitatively the diffusion parameters for rhodium atoms on different planes of their own crystal, as well as for Tungsten atoms on tungsten.

TL;DR: Using linear response theory, the authors obtained a response function for the force exerted on an impurity in the presence of an electric field, which measures the total force including both the local screening of the applied field and the dynamic polarization due to the electron-drag effect.

TL;DR: In this article, the authors present a simple calculation which shows that one can account for the formation of three-dimensional islands of copper on nickel or gold on palladium if the energies associated with misfit strain and misfit dislocations are considered.

TL;DR: In this paper, the growth of the first few layers of Pb on W {110} and W {100} single-crystal surfaces has been studied by AES, LEED, work function measurements and thermal desorption spectroscopy in one combined experimental system also equipped with a quartz oscillator for absolute thickness determinations.

TL;DR: In this paper, the influence of the thermal gradient (thermomigration) and of electric current (electromigration) on atom motions in the solid phase are treated. But only the influences of thermal gradient and electric current are considered.

TL;DR: In this paper, a Monte Carlo simulation of the solid state diffusion process in random binary alloys has been performed on a computer array of A and B atoms, coded in the relevant cubic symmetry.

TL;DR: In this article, the indices of refraction and absorption of thin films of tantalum pentoxide and zirconium dioxide have been determined in the wavelength range 250-2000 nm.

TL;DR: In this paper, a single focusing magnetic sector-field mass spectrometer was used to investigate the secondary ion emissions of clean silicon, oxygen-covered silicon, silicon oxide, silicon carbide and silicon nitride.

TL;DR: In this article, a very high non-uniform electric field is applied to a surface, polarization binding induces a driving force and adatom migration becomes directional, which can be used to obtain information on diffusion parameters, interatomic potentials and some other elementary properties of adatoms.

TL;DR: In this article, spot-like electroluminescence (EL) spectra and their dependence on bias voltage V have been measured for Au island structures on various substrates (quartz glass, Si, GaP, CdS).

TL;DR: In this article, the initial growth of sputtered films of gold on vacuum-cleaved rocksalt substrates was studied. But the results were not compared with the results for evaporation.

TL;DR: In this paper, the dependence of the resistivity and the Hall effect of copper films on the method of film preparation and the film thickness has been studied before and after adsorption of carbon monoxide.

TL;DR: In this article, the currentvoltage characteristics of thin polymer fluorocarbon films with thicknesses between 0.02 and 1.50 μm, deposited by different methods and with different contact materials, have been studied.

TL;DR: A deeper understanding of water-sorption phenomena in MgF 2 films has been acquired by investigation of the substrate temperature dependence of the packing densities and the dynamic change in water sorption in the pores of the films through various subsequent treatments as mentioned in this paper.

TL;DR: In this article, the authors show that the diffusion formalism is appropriate only within the limit of infinite bulk penetration distances, and for impurity diffusion the grain boundary is in equilibrium with the surrounding bulk phase.

TL;DR: In this article, the authors measured the d.c and a.c. properties of two samples of evaporated silicon monoxide sandwiched between aluminium electrodes and concluded that the a.C. mechanism is such that the real and the imaginary components of the complex dielectric susceptibility are proportional to one another regardless of frequency.

TL;DR: In this article, the analysis of compound formation in a diffusion couple was extended to include the effect of interface kinetics, and it was shown that when interface kinetic dominance dominates, a linear rate law may obtain rather than the parabolic rate law expected if simple bulk diffusion were the rate-limiting process.

TL;DR: The epitaxial growth of Pd films on (001) Au substrates has been studied in situ in the transmission electron microscope and new misfit dislocation sources have been found as discussed by the authors.

TL;DR: In this article, the activation energy and diffusion coefficient of Cu dissolved in Au thin films have been measured and the Matano surface for interdiffusing Au and Cu has been determined.