Showing papers in "Thin Solid Films in 1975"
TL;DR: In this article, the displacement of noble gas atoms of Ar and Xe has been used as diffusion markers in growth studies of silicides formed by reacting metal films with silicon substrates, and two approaches were used: either the silicon samples were implanted with Xe or Ar and then covered with a thin layer of metal or the metal layer was implanted with the marker.
Abstract: Implanted noble gas atoms of Ar and Xe have been used as diffusion markers in growth studies of silicides formed by reacting metal films with silicon substrates. MeV 4He ion backscattering has been used to determine the displacement of the markers. Two approaches were used: either the silicon samples were implanted with Xe or Ar and then covered with a thin layer of metal, or the metal layer was implanted with the marker. When the sample was heated to form the silicide layer, the displacement of the marker relative to the surface determined the identity of the diffusing species. Diffusion markers have been used in growth studies of six silicides: Ni2Si, Mg2Si, FeSi, VSi2, TiSi2 and Pd2Si. We found that Si atoms are the predominant moving species in diffusion in VSi2, TiSi2 and FeSi, while Ni atoms are the moving species in Ni2Si and Mg in Mg2Si. In Pd2Si, both Pd and Si are diffusing species with Si the faster of the two. Chemical effects can play a role in marker studies. In the thermal oxidation of Si, the displacement of Xe markers is consistent with the fact that oxygen is the moving species. Implanted As, on the other hand, accumulates at the Si-SiO2 interface. Therefore, it is necessary to choose markers which are chemically inert.
244 citations
TL;DR: The phase Ni 2 Si has been found to form on reacting evaporated Ni films with Si single-crystal substrates at temperatures ranging from 200° to 325°C as discussed by the authors.
Abstract: The phase Ni 2 Si has been found to form on reacting evaporated Ni films with Si single-crystal substrates at temperatures ranging from 200° to 325°C. Its microstructure, impurity content, depth compositional profile and thickening kinetics have been studied by Seemann-Bohlin X-ray diffraction, nuclear backscattering and Auger electron spectroscopy with in situ ion sputtering. The thickening of the Ni 2 Si layer, which develops fiber-type texture with grains averaging 600 A, was found to follow a parabolic relationship with time and to require an activation energy of 1.5±0.1 eV. During the growth of Ni 2 Si, the Ni has been shown by marker experiments to diffuse faster than the Si. Implanted Xe atoms were used as the diffusion marker, displacements of which were determined by backscattering. Combined measurement of layer thickness and marker displacement showed that the mass transport in Ni 2 Si was almost completely dominated by Ni atoms. If we assume diffusion occurs by exchange with lattice vacancies, diffusion of the Ni is favored from a consideration of the first nearest neighbor configurations in the crystal structure of Ni 2 Si and the Goldschmidt atomic radii of Ni and Si. The existence of excess vacancies in the Ni sublattice is not certain from the results of depth compositional profiling; it has shown, however, a pile-up of Si at the Ni free surface. The pile-up may be due to the short-circuit diffusion of Si atoms through the Ni and the Ni 2 Si layer.
203 citations
TL;DR: In this article, the authors identify and describe a number of factors which may cause diffusion in thin films to differ from the ordinary diffusion which occurs in bulk specimens at elevated temperatures, and discuss these factors in turn, with reference to experiment wherever possible.
Abstract: We have attempted to identify and describe a number of factors which may cause diffusion in thin films to differ from the ordinary diffusion which occurs in bulk specimens at elevated temperatures. These factors are enumerated and discussed in turn, with reference to experiment wherever possible.
199 citations
TL;DR: In this article, the drift velocities per unit current density ranged between 10-13 and 10-15 cm3 A-1 s-1 and the gold motion was always in the direction of electron flow.
Abstract: Electric current was passed through thin gold films deposited onto molybdenum surfaces. The edge of the gold film closer to the cathode was seen to move towards the anode, leaving a free molybdenum surface. Large hillocks and crystallites were seen to accumulate on the gold edge pointing toward the anode. The velocity of the film edge was assumed to represent the average drift velocity for electromigration. The velocity of the gold edge was found to be constant at any given temperature and current density. At any constant temperature, the velocity was proportional to the current density. Finally, the velocity depended exponentially on the temperature. Current densities of 105–106 Acm-2 were used at temperatures of 260°–500°C. The “activation energy” for the drift velocity was found to be 0.6 eV in most samples, while some samples showed an energy of about 0.9eV. The drift velocities per unit current density ranged between 10-13 and 10-15 cm3 A-1 s-1 and the gold motion was always in the direction of electron flow.
162 citations
TL;DR: In this paper, the use of the indium chelate derived from dipivaloyl methane, in combination with dibutyl tin diacetate, has been investigated as a CVD technique for the preparation of transparent highly conducting layers of tin-doped indium oxide.
Abstract: The use of the indium chelate derived from dipivaloyl methane, in combination with dibutyl tin diacetate, has been investigated as a CVD technique for the preparation of transparent highly conducting layers of tin-doped indium oxide. A set of optimized deposition conditions is presented together with important optical, electrical, structural and chemical properties of the films. Typical films of the doped indium oxide have n-type resistivity in the range 2.2×10 -4 to 7.1×10 -4 Ωcm. Films with the lowest resistivity exhibit an optimum dopant concentration of around 8 at.% tin in In 2 O 3 :Sn. Coatings have been prepared on quartz or glass substrates with sheet resistances of 10–50 Ω/□ and optical transmission in excess of 80% net throughout the visible spectrum.
138 citations
TL;DR: In this article, a semi-empirical model of the deposition rate during reactive sputtering of metals in atmospheres of oxygen and nitrogen in an argon plasma is presented.
Abstract: A model is presented giving the deposition rate during the reactive sputtering of metals in atmospheres of oxygen and nitrogen in an argon plasma. On the basis of the difference between the sputtering rates of the metal and its chemical compound, the surface coverage, the sticking probability and the incident flux of reactive gas atoms, a semi-empirical equation has been derived. Computer calculations have been made to determine the specific constant values for several reactive sputtering processes such as MoO2, MoN2, TiO2 and TiN2. In each experimental observation an abrupt decrease of the sputtering rate was found at a particular pressure of reactive gas. The model might be applied successfully for sputtering processes over a wide pressure range of the reactive gas.
117 citations
TL;DR: The rate kinetics of the formation of compound phases from thin layers of 1000-1500 A α-Fe deposited onto single-crystal Si have been studied by MeV 4He+ backscattering spectrometry as mentioned in this paper.
Abstract: The rate kinetics of the formation of compound phases from thin layers of 1000–1500 A α-Fe deposited onto single-crystal Si have been studied by MeV 4He+ backscattering spectrometry. Si is observed to dissolve into the thin α-Fe layer before compound formation. A compound layer of FeSi is produced at about 450°C and FeSi2 formation begins at about 550°C. The (100) surface of Si is slightly more reactive than the (111) surface. An inert diffusion marker of implanted Xe was used to investigate the relative movement of the two species. X-ray diffractometry identifies the structure of the compound species as identical to bulk FeSi and FeSi2. The compounds formed on both (111) n-Si and (100) n-Si are apparently polycrystalline and untextured.
103 citations
TL;DR: In this paper, the authors present the methods for describing the evolution of irradiation defects as a function of temperature, defect rate production, sink density etc and discuss the equations which allow the diffusion coefficient under irradiation to be calculated.
Abstract: We present the methods for describing the evolution of irradiation defects as a function of temperature, defect rate production, sink density etc. and we discuss the equations which allow the diffusion coefficient under irradiation to be calculated. A critical study of the literature data and of the existing models allows us to point out theoretical problems which, up to now, have limited the rigorous analysis of diffusion under irradiation. We also emphasize the difficulties of performing experiments which can be interpreted unambiguously.
94 citations
TL;DR: In this paper, the activation energy Δ H for electrotransport in thin silver and gold films was measured by a resistometric technique involving several individual resistance measurements along a stripe, and the temperature of the center of the films was held constant during the entire experiment using a thin film thermocouple.
Abstract: The activation energy Δ H for electrotransport in thin silver and gold films was measured by a resistometric technique involving several individual resistance measurements along a stripe. The temperature of the center of the films was held constant during the entire experiment using a thin film thermocouple. For silver films, two distinct temperature regions with different activation energies were observed. Between 225° and 280°C Δ H was found to be 0.95 eV, which suggests predominance of ion movement in the grain boundaries, whereas at temperatures between 160° and 225°C Δ H was found to be 0.3 eV, which suggests surface-dominated electrotransport. In gold films a uniform activation energy of 0.98 eV was observed throughout the entire temperature range (260°–380°C).
91 citations
TL;DR: In this article, the method of reactive co-sputtering was used to determine the optimum dopant concentration for low resistivity In 2 O 3 /SnO 2 and SnO 2 /Sb 2 O 5 films.
Abstract: The method of reactive co-sputtering was used to determine the optimum dopant concentration for low resistivity In 2 O 3 /SnO 2 and SnO 2 /Sb 2 O 5 films. The optimum concentration of SnO 2 in In 2 O 3 was approximately 10 mol. % and of Sb 2 O 5 in SnO 2 about 7 mol. %. The resistivity increased sharply at lower dopant concentrations but changed only slightly at higher dopant concentrations. The lowest resistivity for reactively sputtered highly transparent In 2 O 3 /SnO 2 films was 1.5 × 10 -3 Ω cm and for SnO 2 /Sb 2 O 5 films 3 × 10 -3 Ω cm. Reactively sputtered In 2 O 3 /SnO 2 films show a strong (111) texture and have an extremely smooth surface.
90 citations
TL;DR: In this paper, the dielectric properties of vacuum-deposited dysprosium oxide films have been studied in the audio-frequency range (102-104 Hz) at various temperatures (78-373 K).
Abstract: The dielectric properties of vacuum-deposited dysprosium oxide films have been studied in the audio-frequency range (102–104 Hz) at various temperatures (78–373 K). The dielectric constant (6.7) was independent of film thickness for thicker films (d > 1000 A). The capacitance was dependent both on temperature and frequency, but became constant for all frequencies at low temperature. Tan δ showed a frequency minimum and its variation with frequency and temperature was in agreement with the model proposed earlier by Goswami and Goswami. The breakdown field (≌106 V cm-1) followed the Forlani-Minnaja relation. The activation energy and the refractive index of these films were also measured.
TL;DR: The surface transport of atoms plays an important role in the growth of crystals from the vapor as mentioned in this paper, and using the field ion microscope it has been possible to establish quantitatively the diffusion parameters for rhodium atoms on different planes of their own crystal, as well as for Tungsten atoms on tungsten.
Abstract: The surface transport of atoms plays an important role in the growth of crystals from the vapor. Using the field ion microscope it has been possible to establish quantitatively the diffusion parameters for rhodium atoms on different planes of their own crystal, as well as for tungsten atoms on tungsten. On rhodium, an f.c.c. metal, major variations in the diffusion barrier are simply correlated with the atomic arrangement of the surface: smooth planes have a low activation energy, rough planes a high one. On tungsten such trends are not apparent, but on both metals the dynamics of motion are normal. Quite a different behavior is found for the diffusion of doublets, which have been studied in detail on the (211) plane of tungsten. Motion occurs over a low activation barrier, but with a low frequency factor, by the advance of one atom at a time. Triplets have been found to behave in precisely the same way.
TL;DR: Using linear response theory, the authors obtained a response function for the force exerted on an impurity in the presence of an electric field, which measures the total force including both the local screening of the applied field and the dynamic polarization due to the electron-drag effect.
Abstract: Using linear response theory, we have obtained a response function for the force exerted on an impurity in the presence of an electric field The response function measures the total force including both the local screening of the applied field and the dynamic polarization due to the “electron wind” (the electron-drag effect) Because of low frequency divergences, the response function cannot be evaluated by perturbation theory We propose a non-perturbative approximation scheme whereby the force response in each order of perturbation theory is taken to be proportional to the electronic current in the next lower order The constant of proportionality is calculated to lowest order in the density or strength of the scatterers The summation of these terms for the force response yields expressions for the electron-drag force which, in the appropriate models, agree with the formulas of Huntington, Fiks, Bosvieux and Friedel, and Sorbello The advantage of the force response function is that it permits calculation for cases which appear difficult to treat with the earlier theories As an illustration, we analyze the case of surface electromigration within the linear response model
TL;DR: In this article, the authors present a simple calculation which shows that one can account for the formation of three-dimensional islands of copper on nickel or gold on palladium if the energies associated with misfit strain and misfit dislocations are considered.
Abstract: The mode of growth of epitaxial deposits can usually be predicted from Young's equation. However, there are some observations of three-dimensional islands in systems where layer by layer growth is predicted. Examples of these systems are copper on nickel and gold on palladium. This paper contains a simple calculation which slows that one can account for the formation of three-dimensional islands of copper on nickel or gold on palladium if the energies associated with misfit strain and misfit dislocations are considered.
TL;DR: In this paper, the growth of the first few layers of Pb on W {110} and W {100} single-crystal surfaces has been studied by AES, LEED, work function measurements and thermal desorption spectroscopy in one combined experimental system also equipped with a quartz oscillator for absolute thickness determinations.
Abstract: The growth of the first few layers of Pb on W {110} and {100} single-crystal surfaces has been studied by AES, LEED, work function measurements and thermal desorption spectroscopy in one combined experimental system also equipped with a quartz oscillator for absolute thickness determinations. The results show striking differences in film growth between {110} and {100} surfaces and a strong dependence of growth upon temperature on the {100} surface.
TL;DR: In this paper, the influence of the thermal gradient (thermomigration) and of electric current (electromigration) on atom motions in the solid phase are treated. But only the influences of thermal gradient and electric current are considered.
Abstract: There are many kinds of driving forces that can bias atom motions in the solid phase. Only the influences of the thermal gradient (thermomigration) and of electric current (electromigration) are treated here. For thermomigration, consideration is given to the action of electron and phonon fluxes and to the “intrinsic” driving force arising from the atom jump process itself. Of the many manifestations of electromigration, attention will be given to anisotropy of the effect in non-cubic single crystals, especially in some of the hexagonal metals. The electromigration of interstitials, both those of the traditional type (conforming to Hagg's rule) and the systems of monovalent solutes in polyvalent matrices (fast diffusers), is another interesting area. The electromigration of the hydrogen isotopes as interstitials in metals has rised some questions of particular interest. Finally, a few comments on the behavior of electromigration in thin films are presented. The emphasis will be on the influence of grain boundary resistivity and the symmetry properties of the interface.
TL;DR: In this paper, a Monte Carlo simulation of the solid state diffusion process in random binary alloys has been performed on a computer array of A and B atoms, coded in the relevant cubic symmetry.
Abstract: The solid state diffusion process in random binary alloys has been simulated on a computer array of A and B atoms, coded in the relevant cubic symmetry. The process was a Monte Carlo sequence on which were superimposed the appropriate conditions of concentration and defect-atom exchange frequencies. Correlation factors for atoms and vacancies have been obtained for b.c.c. and f.c.c. random alloys. Their validity was verified for monatomic solids of the same symmetry, for which correlation factors are known to a high degree of accuracy from random walk analysis. The reproducibility of the simulation method varies between 4% and 1% contingent upon the degree of correlation. Semi-empirical polynomials of degree z−1 (z is the coordination number for the particular lattice symmetry) for − t versus concentration describe the results obtained accurately (t is defined by ƒ = (1+t)/(1−t)) . Comparison with the calculations by Manning shows discrepancies which are only significant when there is considerable correlation. There are, however, substantial differences between the present results and those of Kikuchi and Sato over the entire concentration and frequency ranges.
TL;DR: In this article, the indices of refraction and absorption of thin films of tantalum pentoxide and zirconium dioxide have been determined in the wavelength range 250-2000 nm.
Abstract: The indices of refraction and absorption of thin films of tantalum pentoxide and zirconium dioxide have been determined in the wavelength range 250–2000 nm. These were obtained from the spectrophotometrically measured reflectance and transmittance of the films at normal incidence, using the method devised by Denton et al . The Ta 2 O 5 films were amorphous and had smooth surfaces, and for these films analysis of the dependence of the absorption on photon energy has shown that there are band gaps of 4.15 and 4.51 eV. It is tentatively suggested that the observed absorption is due to direct transitions from a valence band with a spin-orbital splitting of 0.36 eV. The ZrO 2 films were polycrystalline with rough surfaces and had to be treated as double layer films in order to obtain continuous dispersion curves. They were effectively transparent over the spectral range covered.
TL;DR: In this paper, a single focusing magnetic sector-field mass spectrometer was used to investigate the secondary ion emissions of clean silicon, oxygen-covered silicon, silicon oxide, silicon carbide and silicon nitride.
Abstract: In a single focusing magnetic sector-field mass spectrometer the positive and negative secondary ion emissions of clean silicon, oxygen-covered silicon, silicon oxide, silicon carbide and silicon nitride were investigated under UHV conditions in the mass range below M = 150. The overall transmission of the instrument was about 5 × 10-5. A large number of typical molecular secondary ions were emitted from the investigated surfaces. The sensitivity of SIMS for the silicon compounds was found to be well below 10-6 of one monolayer.
TL;DR: In this article, a very high non-uniform electric field is applied to a surface, polarization binding induces a driving force and adatom migration becomes directional, which can be used to obtain information on diffusion parameters, interatomic potentials and some other elementary properties of adatoms.
Abstract: Metal adatoms on perfectly developed crystal planes migrate at relatively low temperatures. When adatoms encounter each other, they may combine into a cluster or they may repel each other. Quite often, adatoms are found to migrate together even though they remain separated by a few atomic diameters. When a very high non-uniform electric field is applied to a surface, polarization binding induces a driving force and adatom migration becomes directional. Quantitative information on diffusion parameters, interatomic potentials and some other elementary properties of adatoms can be obtained with the field ion microscope.
TL;DR: In this article, spot-like electroluminescence (EL) spectra and their dependence on bias voltage V have been measured for Au island structures on various substrates (quartz glass, Si, GaP, CdS).
Abstract: Spot-like electroluminescence (EL) spectra and their dependence on bias voltage V have been measured for Au island structures on various substrates (quartz glass, Si, GaP, CdS). The observed intensities W ∼ exp (-hv/αeV) as well as the radiation with photon energies hv>eV suggest a model including an electron heating mechanism.
TL;DR: In this article, the initial growth of sputtered films of gold on vacuum-cleaved rocksalt substrates was studied. But the results were not compared with the results for evaporation.
Abstract: Data are presented for the initial growth of sputtered films of gold on vacuum-cleaved rocksalt substrates. The films were grown in high vacuum by means of an ion-beam sputtering system, so that no plasma effects were present. The experimental variations of island density with such parameters as deposition time, substrate temperature and deposition rate are reported. These results have been compared with existing data for evaporated films and differences have been found. A simplified treatment of the nucleation and growth kinetics has been used to correlate the results by sputtering to those by evaporation. In the case of sputtering, it has been necessary to postulate a constant density of preferred adsorption sites on the substrate. More detailed theories have been used to confirm the analysis. Apart from the influence of the preferred sites, growth apparently proceeds in the same way for deposition by sputtering and for deposition by evaporation.
TL;DR: In this paper, the dependence of the resistivity and the Hall effect of copper films on the method of film preparation and the film thickness has been studied before and after adsorption of carbon monoxide.
Abstract: The dependence of the resistivity and the Hall effect of copper films on the method of film preparation and the film thickness has been studied before and after adsorption of carbon monoxide. It is shown that the Fuchs-Sondheimer theory does not adequately predict the dependence of resistivity on film thickness, because thickness-dependent disorder must be considered. It is further shown in the discussion of the Hall effect that scattering anisotropy must be taken into account. The influence of the adsorbed carbon monoxide on the resistivity and Hall coefficient can be ascribed to the scattering effect at the adsorbed molecules.
TL;DR: In this article, the currentvoltage characteristics of thin polymer fluorocarbon films with thicknesses between 0.02 and 1.50 μm, deposited by different methods and with different contact materials, have been studied.
Abstract: The current-voltage characteristics of thin polymer fluorocarbon films with thicknesses between 0.02 and 1.50 μm, deposited by different methods and with different contact materials, have been studied. Over the whole range of thickness and field strength investigated the measured characteristics can be described by a uniform conduction mechanism and a continuous relation between current density and field strength. No noticeable influence of the polymerization method and the electrode material used was observed for steady state currents. The results are interpreted by means of a modified Poole-Frenkel effect for insulators with a high impurity density. With this theory it was possible to determine some unknown material parameters, such as the impurity density N D (∼ 10 19 cm −3 ) and the electron mobility μ (∼0.1 cm 2 V −1 s −1 ).
TL;DR: A deeper understanding of water-sorption phenomena in MgF 2 films has been acquired by investigation of the substrate temperature dependence of the packing densities and the dynamic change in water sorption in the pores of the films through various subsequent treatments as mentioned in this paper.
Abstract: A deeper understanding of water sorption phenomena in MgF 2 films has been acquired by investigation of the substrate temperature dependence of the packing densities and the dynamic change in water sorption in the pores of the films through various subsequent treatments. As a result, 10% of the total volume of the films, or 32.0–35.7% of the total pores, has been shown to be already occupied by water molecules before the films are exposed to air. When this effect was taken into account the true value of the packing density of MgF 2 films deposited onto unheated substrates was found to be 0.72–0.75.
TL;DR: In this article, the authors show that the diffusion formalism is appropriate only within the limit of infinite bulk penetration distances, and for impurity diffusion the grain boundary is in equilibrium with the surrounding bulk phase.
Abstract: The transport equation is solved in a bicrystal which is represented by a discrete set of points. Atoms may jump from one site to another with the appropriate jump frequencies. By comparing our solution with that of the standard grain boundary diffusion models, we show that the diffusion formalism is appropriate only within the limit of infinite bulk penetration distances. Within this limit: 1. (1) the atomic expression for the grain boundary diffusion coefficient is unperturbed by exchanges of atoms between the bulk and the grain boundary; 2. (2) the “grain boundary thickness” introduced in the standard models is a measure of the number of high diffusivity paths along the grain boundary but is not a simple function of the actual distance between the atoms in the grain boundary; and 3. (3) for impurity diffusion the grain boundary is in equilibrium with the surrounding bulk phase. When the bulk penetration distance is not large enough, additive terms render the diffusion formalism inappropriate. Their analytical form and some numerical values are given. The same method is used to give the atomic definition of the diffusion coefficient in periodic structures. The tilt boundary (simple periodic structure) is studied as an example.
TL;DR: In this article, the authors measured the d.c and a.c. properties of two samples of evaporated silicon monoxide sandwiched between aluminium electrodes and concluded that the a.C. mechanism is such that the real and the imaginary components of the complex dielectric susceptibility are proportional to one another regardless of frequency.
Abstract: Measurements are reported of the d.c. and a.c. properties of two samples of evaporated silicon monoxide sandwiched between aluminium electrodes. The two samples have d.c. conductivities in the ratio 103:1, while the a.c. conductivities are in the ratio 3:1. The high field behaviour is attributable to the Poole-Frenkel mechanism. The a.c. conductivity show the familiar frequency dependence σ′∝ωn with n≈0.6 for both samples in the lower frequency range. The more conducting sample shows evidence of a second loss mechanism with n≈0.9 at higher frequencies. Good consistency with Kramers-Kronig relations is obtained and the conclusion is drawn that the a.c. mechanism is such that the real and the imaginary components of the complex dielectric susceptibility are proportional to one another regardless of frequency, both obeying the relation χ′∝χ″∝ωn−1. It is found that the d.c. and a.c. activation energies are equal within the accuracy of the measurements.
TL;DR: In this article, the analysis of compound formation in a diffusion couple was extended to include the effect of interface kinetics, and it was shown that when interface kinetic dominance dominates, a linear rate law may obtain rather than the parabolic rate law expected if simple bulk diffusion were the rate-limiting process.
Abstract: The analysis of compound formation in a diffusion couple previously developed by the authors has been extended to include the effect of interface kinetics. When interface kinetics dominate, a linear rate law may obtain rather than the parabolic rate law expected if simple bulk diffusion were the rate-limiting process. Additional data for the rate of formation of Nb3Sn at a bronze-niobium interface have been presented. Our results imply that interface kinetics are important when the concentration of Sn in the bronze matrix exceeds about 8 at.% or when certain metallic impurities are present in the niobium.
TL;DR: The epitaxial growth of Pd films on (001) Au substrates has been studied in situ in the transmission electron microscope and new misfit dislocation sources have been found as discussed by the authors.
Abstract: The epitaxial growth of Pd films on (001) Au substrates has been studied in situ in the transmission electron microscope and new misfit dislocation sources have been found. The growth of the Pd film was pseudomorphic up to a mean deposit thickness of 10 A when Shockley edge-type misfit dislocations nucleated as half-loops at the Pd surface and expanded into the interface. In deposits of 10–20 A thickness, secondary surface nucleation and growth of Frank misfit dislocations caused most Schockley misfit dislocations to convert to perfect misfit dislocations with Burgers vectors lying in the film plane. Anomalous dislocation images are explained by theoretical images computed to allow for surface relaxation. Expressions for the displacement field are given for a general edge dislocation lying parallel to a free surface.
TL;DR: In this article, the activation energy and diffusion coefficient of Cu dissolved in Au thin films have been measured and the Matano surface for interdiffusing Au and Cu has been determined.
Abstract: Backscattering of energetic He+ ions has been applied to study the thermal behavior of metallic thin film couples. A description of the methods used to determine the surface concentration and concentration profiles of interdiffusing species is given. As applications, the activation energy and diffusion coefficient of Cu dissolved in Au thin films have been measured. The Matano surface for interdiffusing Au and Cu has been determined. This surface practically coincides with the initial Au-Cu interface. Errors in the determination of the surface concentration of mixed metallic couples have been evaluated from both a theoretical and an experimental point of view. An example of the limitations of backscattering is given in the analysis of a laterally non-uniform target.