Journal ArticleDOI
High-efficiency solar cells based on Cu(InAl)Se2 thin films
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TLDR
In this paper, a Cu(InAl)Se2 solar cell with 16.9% efficiency was demonstrated using a thin film deposited by four-source elemental evaporation.Abstract:
A Cu(InAl)Se2 solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se2 thin film deposited by four-source elemental evaporation and a device structure of glass/Mo/Cu(InAl)Se2/CdS/ZnO/indium tin oxide/(Ni/Algrid)/MgF2. A key to high efficiency is improved adhesion between the Cu(InAl)Se2 and the Mo back contact layer, provided by a 5-nm-thick Ga interlayer, which enabled the Cu(InAl)Se2 to be deposited at a 530 °C substrate temperature. Film and device properties are compared to Cu(InGa)Se2 with the same band gap of 1.16 eV. The solar cells have similar behavior, with performance limited by recombination through trap states in the space charge region in the Cu(InAl)Se2 or Cu(InGa)Se2 layer.read more
Citations
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Thin-film solar cells: an overview
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T. M. Razykov,T. M. Razykov,Chris Ferekides,Don L. Morel,Elias K. Stefanakos,H.S. Ullal,Hari M. Upadhyaya +6 more
TL;DR: In this paper, the technical progress made in the past several years in the area of mono- and polycrystalline thin-film photovoltaic (PV) technologies based on Si, III-V, II-VI, and I-III-VI2 semiconductors, as well as nano-PV.
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Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO
Hiromichi Ohta,Masahiro Hirano,Ken Nakahara,Hideaki Maruta,Tetsuhiro Tanabe,Masao Kamiya,Toshio Kamiya,Hideo Hosono +7 more
TL;DR: In this paper, a transparent trilayered oxide films of ZnO/NiO/indium tin oxide were heteroepitaxially grown on a YSZ (111) substrate by pulsed-laser deposition combined with a solid-phaseepitaxy technique.
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Transparent Oxide Optoelectronics
Hiromichi Ohta,Hideo Hosono +1 more
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UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO
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References
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Journal ArticleDOI
Electronic properties of Cu(In,Ga)Se2 heterojunction solar cells–recent achievements, current understanding, and future challenges
Uwe Rau,H.W. Schock +1 more
TL;DR: In this article, the authors reviewed the recent achievements of high-efficiency Cu(In,Ga)Se2 heterojunction solar cells with a special focus on the understanding of the electronic transport properties of the devices.
Journal ArticleDOI
Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap
TL;DR: In this article, thin-film solar cells have been fabricated from Cu(InGa)Se2 films which were deposited by four-source elemental evaporation with [Ga]/([In]+[Ga]) from 0.27 to 0.69 corresponding to a band gap from 1.16 to 1.45 eV.
Journal ArticleDOI
Electrical characterization of Cu(In, Ga)Se2 thin-film solar cells and the role of defects for the device performance
TL;DR: In this paper, the authors identify a specific defect as the relevant recombination center and show that the concentration of this defect varies with the Ga-content in the absorber alloy with the highest concentration in pure CuGaSe2.
Journal ArticleDOI
CuIn1−xAlxSe2 thin films and solar cells
TL;DR: In this article, single-phase CuIn1−xAlxSe2 films were deposited by four source elemental evaporation with a composition range of 0.6 to 0.62.