Transparent Oxide Optoelectronics
Hiromichi Ohta,Hideo Hosono +1 more
TLDR
In this paper, a review of transparent oxide optoelectronic devices based on their efforts focusing on transparent thin-film transistors fabricated from single-crystalline films of InGaO3(ZnO)5 with a natural superlattice structure is presented.About:
This article is published in Materials Today.The article was published on 2004-06-01 and is currently open access. It has received 325 citations till now. The article focuses on the topics: Diode.read more
Citations
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Transparent conductors as solar energy materials: A panoramic review
TL;DR: Transparent conductors (TCs) have a multitude of applications for solar energy utilization and for energy savings, especially in buildings as discussed by the authors, which leads naturally to considerations of spectral selectivity, angular selectivity, and temporal variability of TCs, as covered in three subsequent sections.
Journal ArticleDOI
Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
TL;DR: The effect of Ar plasma treatment on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated in this paper, where the authors attempted to reduce the contact resistance between the Pt∕Ti (source/drain electrode) and a-IZO (channel).
Patent
Semiconductor device, electronic device, and method of manufacturing semiconductor device
TL;DR: In this article, the authors propose a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
Journal ArticleDOI
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
TL;DR: In this article, a chemical design concept of ionic amorphous oxide semiconductor (IAOS) and its unique electron transport properties, and electronic structure, by comparing them with those of conventional ammorphous semiconductors is addressed.
References
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Book ChapterDOI
Pulsed laser deposition of thin films
TL;DR: Pulsed laser deposition of high-temperature superconducting thin films for active and passive device applications is discussed in this article, with a focus on the commercial scale-up of Pulsed Laser Deposition.
Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Journal ArticleDOI
Optically pumped lasing of ZnO at room temperature
TL;DR: In this paper, the authors reported the observation of optically pumped lasing in ZnO at room temperature using a plasma-enhanced molecular beam epitaxy on sapphire substrates.
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P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
ZnO-based transparent thin-film transistors
TL;DR: In this article, the authors proposed a transparent ZnO-based thin-film transistors (TFTs) for select-transistors in each pixel of an active-matrix liquid-crystal display.