Patent
High resistivity silicon-on-insulator substrate and method of forming
TLDR
In this article, a method of forming a silicon-on-insulator (SOI) wafer substrate is described, which includes providing a handle substrate, forming a high resistivity material layer over the handle substrate and bonding a donor wafer to the top surface of the insulator layer to form the SOI wafer.Abstract:
A semiconductor structure and a method of forming the same. In one embodiment, a method of forming a silicon-on-insulator (SOI) wafer substrate includes: providing a handle substrate; forming a high resistivity material layer over the handle substrate, the high resistivity material layer including one of an amorphous silicon carbide (SiC), a polycrystalline SiC, an amorphous diamond, or a polycrystalline diamond; forming an insulator layer over the high resistivity material layer; and bonding a donor wafer to a top surface of the insulator layer to form the SOI wafer substrate.read more
Citations
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Patent
Method of manufacturing high resistivity soi wafers with charge trapping layers based on terminated si deposition
TL;DR: In this paper, a method of preparing a single crystal semiconductor handle wafer in the manufacture of a silicon-on-insulator device is provided, which consists of forming a multilayer of passivated semiconductors layers on a dielectric layer of a high resistivity single-crystal semiconductor handled wafer.
Patent
Methods for producing silicon on insulator structures having high resistivity regions in the handle wafer
TL;DR: In this paper, a silicon on insulator (SOI) structure with a high resistivity region in the handle wafer of the SOI structure is described and methods for producing such SOI structures are also provided.
Patent
High linearity SOI wafer for low-distortion circuit applications
Alan B. Botula,Jeffrey E. Hanrahan,Mark D. Jaffe,Alvin J. Joseph,Dale W. Martin,Gerd Pfeiffer,James A. Slinkman +6 more
TL;DR: In this article, a first side of a substrate is implanted with a first material to change the crystalline structure of the substrate from a first crystalline state to a second crystalline states, after the first material is implanted.
Patent
Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof
TL;DR: In this article, a method for preparing a semiconductor-on-insulator structure comprising a silicon oxynitride layer having a gradient oxygen concentration was presented, and a method was provided for constructing a silicon-oxide-oxide layer with respect to the gradient of oxygen concentration.
Patent
High resistivity SOI wafers and a method of manufacturing thereof
TL;DR: In this article, a high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided, which comprises an intermediate semiconductor layer between the handle substrate and the buried oxide layer.
References
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Patent
Multilayered semiconductor wafer and process for manufacturing the same
Brian R. Murphy,Reinhold Wahlich +1 more
TL;DR: In this paper, a multilayered semiconductor wafer consisting of a handle wafer (5) and a silicon carbide donor layer (44) is described, which is bonded to the handle-wafer by X-ray diffraction.
Patent
Silicon-on-insulator wafer for integrated circuit
TL;DR: An RF semiconductor device is fabricated from a starting substrate comprising a polysilicon handle wafer, a buried oxide layer over the poly-silicon handled wafer and a silicon layer over this oxide layer as mentioned in this paper.
Patent
Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication
TL;DR: In this article, a wafer is fabricated by forming the intermediate insulating layer on the first silicon layer in a heated vacuum chamber; depositing the oxide layer; and superimposing the second silicon layer.
Patent
High resistivity SOI base wafer using thermally annealed substrate
TL;DR: In this paper, a thermal annealing-based method for forming a semiconductor-on-insulator (SOI) substrate with a high resistivity surface layer that is positioned at the interface with the buried insulating layer is presented.
Patent
Semiconductor-on-diamond devices and associated methods
TL;DR: Semiconductor-on-diamond (SOD) as discussed by the authors is a method for making SOD substrates and methods for making such substrates are provided. In one aspect, a method of making an SOD substrate may include depositing a base layer onto a lattice-orienting silicon (Si) substrate such that the base layer lattice is substantially oriented by the Si substrate, and disposing a layer of diamond onto the semiconductor layer.