D
Dimitri Lederer
Researcher at Université catholique de Louvain
Publications - 79
Citations - 1900
Dimitri Lederer is an academic researcher from Université catholique de Louvain. The author has contributed to research in topics: MOSFET & Silicon on insulator. The author has an hindex of 21, co-authored 64 publications receiving 1749 citations. Previous affiliations of Dimitri Lederer include Tyndall National Institute.
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Plant functional type classification for earth system models: results from the European Space Agency's Land Cover Climate Change Initiative
Ben Poulter,Ben Poulter,Natasha MacBean,Andrew Hartley,Iryna Khlystova,Olivier Arino,Richard Betts,Sophie Bontemps,Martin Boettcher,Carsten Brockmann,Pierre Defourny,Stefan Hagemann,Martin Herold,Grit Kirches,Céline Lamarche,Dimitri Lederer,Catherine Ottlé,Marco Peters,Philippe Peylin +18 more
TL;DR: In this paper, the authors present the results of the European Space Agency Climate Change Initiative (CCI) project with a focus on the mapping approach used to convert the United Nations Land Cover Classification System to plant functional types (PFTs).
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New substrate passivation method dedicated to HR SOI wafer fabrication with increased substrate resistivity
TL;DR: In this paper, the authors proposed a new passivation method to get rid of parasitic surface conduction in oxidized high resistivity (HR) silicon and HR silicon-on-insulator (SOI) wafers.
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What are the limiting parameters of deep-submicron MOSFETs for high frequency applications?
Gilles Dambrine,C. Raynaud,Dimitri Lederer,Morin Dehan,O. Rozeaux,M. Vanmackelberg,Francois Danneville,Sylvie Lepilliet,Jean-Pierre Raskin +8 more
TL;DR: In this paper, the degradation of the maximum oscillation frequency is mainly related to the increase of the parasitic feedback gate-to-drain capacitance and output conductance with the physical channel length reduction.
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Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization
TL;DR: In this paper, a wideband experimental and three-dimensional simulation analyses have been carried out to compare the analog/RF performance of planar double-gate (DG), triple-gate, Fin-FET, Pi-Gate (PG), and single-gate SOI MOSFETs.
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Effective resistivity of fully-processed SOI substrates
TL;DR: In this paper, a new quality factor called effective resistivity (rho(eff)), which is used to characterize and fairly compare the substrate resistivity of fully processed SOI wafers, is introduced.