Journal ArticleDOI
High Speed Photoresponse Mechanism of a GaAs-MESFET
TLDR
In this article, the high speed photoresponse of a GaAs-MESFET was demonstrated using a light pulse of about 100 ps duration with a 2 GHz repetition rate generated by a GaAlAs-DH laser diode.Abstract:
The high speed photoresponse of a GaAs-MESFET has been demonstrated using a light pulse of about 100 ps duration with a 2 GHz repetition rate generated by a GaAlAs-DH laser diode. The measured current pulse heights through the gate and through the drain as a function of the gate bias voltage confirmed a theory that the photoresponse in MESFETs is caused by the sweepout effect of photogenerated carriers in the depletion layer extending from the gate to the drain, just as in photodiodes with subsequent ordinal FET amplification.read more
Citations
More filters
Journal ArticleDOI
Microwave Performance of an Optically Controlled AIGaAs/GaAs High Electron Mobility Transistor and GaAs MESFET
TL;DR: In this article, the light-induced voltage, the increase in the drain current, the RF gain, and the change in the microwave scattering parameters of an AIGaAs/GaAs high electron mobility transistor (HEMT) under optical illumination of photon energy equal to or greater than the semiconductor band gap are computed.
Book ChapterDOI
Chapter 6 Diamond-based radiation and photon detectors
TL;DR: In this article, the authors discuss different forms of diamond detectors for photodetection and ionising radiation detection applications, and discuss the problem of effective doping of diamond films for many device structures, and this remains a difficult area.
Journal ArticleDOI
Microwave Characteristics of an Optically Controlled GaAs MESFET
TL;DR: In this article, the results of an experimental investigation of microwave characteristics of a GaAs MESFET under optically direct-controlled conditions were presented, and it was found that they can be controlled by varying the incident light intensity in the same manner as when varying the gate bias voltage.
Journal ArticleDOI
Pulsed laser-induced single event upset and charge collection measurements as a function of optical penetration depth
Joseph S. Melinger,Dale McMorrow,A.B. Campbell,Stephen P. Buchner,Lan Hu Tran,Alvin R. Knudson,W.R. Curtice +6 more
TL;DR: In this article, the authors used picosecond laser pulses to investigate single event upsets and related fundamental charge collection mechanisms in semiconductor microelectronic devices and circuits, and they found a correlation between charge collection in the device and the ensuing single event upset in the composite circuit.
Journal ArticleDOI
GaAs integrated optoelectronics
TL;DR: In this paper, the various elements which constitute the integrated optoelectronic circuits (IOEC's) with emphasis on the structure of GaAlAs injection lasers are reviewed and several integrated circuits on GaAs substrates are described in detail.