MOSFETs have the potential to be-come a highly sensitive pressure sensor compared with conventional piezoresistive device such as doped Si. In this study, we have proposed a novel pressure sensor composed of silicon-on-nothing (SON) MOSET. It was clearly indicated that the SON-MOSFET had high gauge factor of 230 which was more than twice as high as conventional values. These results expedite developments and realization of sensor integrated heterogeneous system.

Highly sensitive pressure sensor with silicon-on-nothing (SON) MOSFET for sensor integrated heterogeneous system

The technology of through silicon via (TSV) is one of the most promising enablers for 3-D integrated circuit (IC) integration. The embedded TSVs in silicon chips would, however, cause the problem of carrier mobility changes in surrounding devices. There are two objectives in this paper. The first objective is to numerically and experimentally investigate the effect of via-middle Cu TSV on the mobility change of metal-oxide-semiconductor transistors in the wafer-level silicon chips for this 3-D IC integration. The second objective is to further determine the keep-out zone (KOZ) in terms of the key parameters such as the SiO2 layer effect, the zero-stress temperature, the single and array vias, the through and blind vias, silicon material properties, as well as the diameter and pitch of vias. KOZs based on the >10% change in carrier mobility are identified by finite element numerical calculations associated with the corresponding piezoresistance coefficients. The numerical results of the changes in saturated current are experimentally validated with good agreements. With the results of detailed analyzes using this validated model, the key parameters affecting the KOZs are presented and further discussed in detail.

Investigation on Cu TSV-Induced KOZ in Silicon Chips: Simulations and Experiments

A method to estimate the gauge factor of a polysilicon strain gauge at the wafer level is proposed. It is difficult to measure the gauge factor of a polysilicon strain gauge formed on the silicon diaphragm of a mechanical transducer because the polysilicon strain gauge is integrated into the diaphragm. The authors fabricated polysilicon strain gauges of various shapes and implanted with various concentrations of boron, and measured the gauge factor of each strain gauge. In the experimental results, the gauge factors are calculated by multiplying the resistivity coefficient of gauge factor (RCGF) determined by the boron concentration and resistivity of the polysilicon strain gauge. The authors also determined the RCGF of the polysilicon strain gauges implanted with boron concentrations of 1.0×1019, 1.5×1019 and 1.0×1020 cm−3.

Highly sensitive pressure sensor with silicon-on-nothing (SON) MOSFET for sensor integrated heterogeneous system

References

Investigation on Cu TSV-Induced KOZ in Silicon Chips: Simulations and Experiments

Resistivity dependence of gauge factor of polysilicon strain gauge

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