Proceedings ArticleDOI
Hybrid small-signal π-model for the lateral NQS effect in SiGe HBTs
Shon Yadav,Anjan Chakravorty,Michael Schroter +2 more
- pp 154-157
TLDR
The hybrid model shows significantly higher accuracy than both the state-of-the-art model and the π-model when compared with the device simulation data.Abstract:
The state-of-the-art and π-models for the lateral non-quasi-static (NQS) effect are analyzed. The superiority of the π-model to capture the lateral NQS effect is demonstrated through small-signal simulations of both the models, implemented in Verilog-A. A hybrid model is proposed and a corresponding formulation of the base impedance is obtained. The equation gives the base impedance of the state-of-the-art as well as the π-model under appropriate conditions. The methodology to implement the hybrid model in Verilog-A is discussed. The hybrid model shows significantly higher accuracy than both the state-of-the-art model and the π-model when compared with the device simulation data.read more
Citations
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Journal ArticleDOI
DC Current-crowding estimation for SiGe:C heterojunction bipolar transistors
Eloy Ramirez-Garcia,Eloy Ramirez-Garcia,E. Garduño-Nolasco,Luis M. Rodriguez-Mendez,L.M. Diaz-Albarran,Donato Valdez-Pérez,Martha Galaz-Larios,Frédéric Aniel,Nicolas Zerounian,M. Enciso-Aguilar +9 more
TL;DR: In this paper, the influence of DC current-crowding in bipolar transistors on the variation of emitter width (WE,ef) as a function of collector current density (JC) in SiGe:C HBTs is investigated.
Proceedings ArticleDOI
Hybrid two-section model for the small-signal current crowding effect in SiGe HBTs
Shon Yadav,Anjan Chakravorty +1 more
TL;DR: In this article, a two-section equivalent circuit model with hybrid topology is proposed to model the base impedance of SiGe HBTs, which is suitable for implementation in compact-model.
References
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Book
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Proceedings ArticleDOI
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Journal ArticleDOI
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