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Patent

Image sensors with optical trench

TLDR
In this paper, the optical trench structure is made of low dielectric constant material with an index of refraction that is less than the index of the material of surrounding layers (e.g., the substrate).
Abstract
A device and method for providing an optical trench structure for a pixel which guides incoming light onto the photosensor of the pixel. The optical trench structure has an optically reflecting barrier that substantially mitigates optical crosstalk. The optical trench structure is made of low dielectric constant material with an index of refraction that is less than the index of refraction of the material of surrounding layers (e.g., the substrate). This difference in refractive index causes an internal reflection into an optical path existing between a lens and pixel.

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Citations
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Patent

Image sensor with improved light sensitivity

TL;DR: In this paper, an image sensor for capturing a color image is disclosed having a two-dimensional array having first and second groups of pixels wherein pixels from the first group of pixels have narrower spectral photoresponses than pixels from a second group.
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Solid-state imaging device, method of manufacturing the same, and electronic apparatus

TL;DR: In this paper, a pixel region consisting of a photoelectric conversion section and a pixel transistor is arranged, and a multilayer interconnection layer is formed through an interlayer insulating film.
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Providing multiple video signals from single sensor

TL;DR: In this article, a method for using a capture device to capture at least two video signals corresponding to a scene was proposed, which includes: providing a two-dimensional image sensor having a plurality of pixels, reading a first group of pixels from the image sensor at a first frame rate to produce a first video signal of the image scene, and then reading a second group of pixel from the camera at a second frame rate for producing a second video signal; and using at least one of the video signals for adjusting one or more of the capture device parameters.
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Processing color and panchromatic pixels

TL;DR: In this article, a method for forming a final digital color image using an image sensor having panchromatic pixels and color pixels corresponding to at least two color photoresponses was proposed.
References
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Journal ArticleDOI

CMOS active pixel image sensor

TL;DR: In this paper, a 2.0 /spl mu/m double-poly, double-metal foundry CMOS active pixel image sensor is reported, which uses TTL compatible voltages, low noise and large dynamic range, and is useful in machine vision and smart sensor applications.
Journal ArticleDOI

256/spl times/256 CMOS active pixel sensor camera-on-a-chip

TL;DR: In this paper, an active pixel sensor (APS) is integrated on a CMOS chip with the timing and control circuits, and signal conditioning to enable random access, low power (/spl sim/5 mW) operation, and low read noise (13 e/sup -/ rms).
Patent

CMOS imager with storage capacitor

TL;DR: In this paper, a CMOS imager with an improved signal to noise ratio and improved dynamic range is described, which provides improved charge storage by fabricating a storage capacitor in parallel with the photocollection area of the imager.
Patent

Multi-layered gate for a CMOS imager

TL;DR: In this article, a multi-layered gate for use in a CMOS or CCD imager formed with a second gate at least partially overlapping it is described. And the processes for forming the multilayered gate and the overlapping gate are discussed.
Patent

CMOS imager with selectively silicided gates

TL;DR: In this article, an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gate was described.