Journal ArticleDOI
Impact ionization of electrons in silicon (steady state)
J. Y. Tang,Karl Hess +1 more
TLDR
In this paper, Monte Carlo simulations of electron impact ionization in silicon are presented which include the pseudopotential band structure as well as collision broadening and higher order effects in the electron phonon interaction.Abstract:
Monte Carlo simulations of electron impact ionization in silicon are presented which include the pseudopotential band structure as well as collision broadening and higher order effects in the electron phonon interaction. Conduction in the two lowest conduction bands of silicon is considered. We also present new results for the impact ionization probability and deformation potential constants which are obtained by comparing our theory with a variety of experimental results.read more
Citations
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Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport
TL;DR: In this article, Monte Carlo simulations of electron transport in seven semiconductors of the diamond and zinc-blende structure (Ge, Si, GaAs, InP, AlAs, AlP, InAs, GaP) and some of their alloys were performed at two lattice temperatures (77 and 300 K).
Journal ArticleDOI
Understanding hot‐electron transport in silicon devices: Is there a shortcut?
TL;DR: In this paper, the results of a Monte Carlo study of carrier multiplication in silicon bipolar and field-effect transistors and of electron injection into silicon dioxide are presented, and it is shown that quantization effects in inversion layers cause a shift of the threshold energy for impact ionization.
Journal ArticleDOI
Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion
TL;DR: In this article, the authors describe the implementation of a Monte Carlo model for electron transport in silicon, which uses analytic, nonparabolic electron energy bands, which are computationally efficient and sufficiently accurate for future lowvoltage s, 1V d nanoscale device applications.
Journal ArticleDOI
Thresholds of impact ionization in semiconductors
TL;DR: Using a first-principles approach to the ionization rate, the authors re-examine some of the prejudices concerning impact ionization and offer a new view of the role of thresholds.
Journal ArticleDOI
Quantum yield of electron impact ionization in silicon
TL;DR: In this article, the number of generated electronhole pairs as a function of the incident electron energy, up to 5 eV, was found to be in excellent agreement with recent theoretical calculations of quantum yield.
References
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Journal ArticleDOI
Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures
TL;DR: Pseudopotential form factors and band structures for 14 semiconductors of the diamond and zinc-blende structures were determined for 14 crystal types in this article, where the splitting of energy levels in the crystal were used.
Journal ArticleDOI
Problems related to p-n junctions in silicon
TL;DR: In this article, a simplified model of secondary ionization, avalanche breakdown and microplasma phenomena in p-n junctions was proposed, in which holes and electrons have identical properties described by four constants: generation of highest energy or Raman phonons, energy E R and mean-free-path L R ; ionization or electron-hole pair production, threshold carrier energy E i and mean free path L i.
Journal ArticleDOI
Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors
TL;DR: In this article, a Boltzmann equation is converted to an integral equation for the space and energy dependent collision density by performing the angular integrations, and the integral equation is solved numerically to obtain alpha, the ionization rate per unit path length.
Journal ArticleDOI
Electron drift velocity in silicon
TL;DR: In this paper, the experimental results for electrons obtained with the time-of-flight technique are presented for temperatures between 8 and 300 and fields ranging between 1.5 and 5 \ifmmode\times\else\texttimes\fi{} ${10}^{4}$ V ${\mathrm{cm}}^{\ensuremath{-}1} 1}$ oriented along crystallographic directions.
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