Journal ArticleDOI
Impact of lens aberrations on optical lithography
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TLDR
The impact of different types of aberrations on lithographic imagery through simulation is examined and new techniques for measuring aberration by examining lithographically printed resist patterns are considered.Abstract:
All optical projection systems for microlithography depart from perfection because of various lens aberrations, especially when large image field size is combined with high numerical aperture (NA). Such aberrations have a variety of effects on lithographic imaging: shifts in the image position, image asymmetry, reduction of the process window, and the appearance of undesirable imaging artifacts. These undesirable effects are sometimes exacerbated through use of resolution enhancement techniques such as phase-shift masks or nonstandard illumination. This paper examines the impact of different types of aberrations on lithographic imagery through simulation. New techniques for measuring aberrations by examining lithographically printed resist patterns are considered.read more
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Book
Principles of Lithography
TL;DR: The second edition of this book as discussed by the authors was written to address several needs, and the revisions for the second edition were made with those original objectives in mind, and many new topics have been included in this text commensurate with the progress that has taken place during the past few years, and several subjects are discussed in more detail.
Patent
Method and apparatus for facilitating process-compliant layout optimization
TL;DR: In this paper, the authors present a system that simulates effects of a manufacturing process on an integrated circuit to enhance process latitude and/or reduce layout size, and the system then identifies problem areas in the simulated printed image that do not meet a specification.
Patent
Visual inspection and verification system
TL;DR: In this paper, a method and apparatus for inspecting a photolithography mask for defects is provided, which consists of providing a defect area image to an image simulator wherein the defect image is an image of a portion of a photochemical mask, and providing a set of lithography parameters as a second input to the image simulator.
Proceedings ArticleDOI
Statistical Yield Modeling for Sub-wavelength Lithography
A. Sreedhar,Sandip Kundu +1 more
TL;DR: A yield modeling technique for a given layout, based on a statistical model for process variability, is presented, which shows that yield sensitivity increases at smaller feature sizes.
Proceedings ArticleDOI
Characterizing process variation in nanometer CMOS
Kanak B. Agarwal,Sani R. Nassif +1 more
TL;DR: An overview of test structures for characterizing statistical variation of process parameters is presented and the test structure design and characterization strategy for calibrating random and layout dependent systematic components of process variation is discussed.
References
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Journal ArticleDOI
Zernike circle polynomials and optical aberrations of systems with circular pupils.
TL;DR: Zernike circle polynomials, their numbering scheme, and relationship to balanced optical aberrations of systems with circular pupils are discussed.
Journal ArticleDOI
Strehl ratio for primary aberrations: some analytical results for circular and annular pupils.
TL;DR: In this paper, a closed-form solution for the Strehl ratio was derived for imaging systems with circular and annular pupils aberrated by primary aberrations, except in the case of coma, for which the integral form was used.
Proceedings ArticleDOI
Approximate models for resist processing effects
TL;DR: In this paper, the effects of resist processing were incorporated into simulated images, and a Second Order Model based on a segmented development path was also presented, allowing the prediction of resist linewidths based on calculated image profiles.
Journal ArticleDOI
Wavefront Engineering for Photolithography
TL;DR: The inner structures of everyday items such as the personal computer fall into that size category and warrant our interest as discussed by the authors, and the critical dimensions of individual features of state-of-the-art memory chips are now as small as 500 nanometers and are getting smaller.
Proceedings ArticleDOI
Quantitative stepper metrology using the focus monitor test mask
Timothy A. Brunner,Alexander L. Martin,Ronald M. Martino,Christopher P. Ausschnitt,Thomas Harold Newman,Michael S. Hibbs +5 more
TL;DR: A detailed verification of the validity of this approach to lithographic test pattern introduction, along with several preliminary applications, is presented.