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Influence of the confinement potential on the electron-hole-pair states in semiconductor microcrystallites.

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TLDR
The energies of the two energetically lowest dipole-allowed electron-hole-pair states in semiconductor microcrystallites are computed variationally and significant deviations from the infinite-potential approximation are obtained.
Abstract
The energies of the two energetically lowest dipole-allowed electron-hole-pair states in semiconductor microcrystallites are computed variationally. Details of the quantum confinement conditions, such as the finite value of the quantum confinement potential and the different effective electron-hole masses inside and outside the crystallites, are considered explicitly. Significant deviations from the infinite-potential approximation are obtained.

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Journal ArticleDOI

Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems

A.D. Yoffe
- 01 Mar 1993 - 
TL;DR: In this paper, a review is concerned with quantum confinement effects in low-dimensional semiconductor systems, focusing on the optical properties, including luminescence, of nanometre-sized microcrystals.
Journal ArticleDOI

Three- and low-dimensional inorganic semiconductors

TL;DR: In this article, the structural, optical and related properties of inorganic-organic hybrid systems with a semiconductor behavior are reviewed, especially for semiconductor particles, in which the inorganic part is inorganic.
Journal ArticleDOI

Resonance Raman studies of the ground and lowest electronic excited state in CdS nanocrystals

TL;DR: The size dependence of the resonance Raman spectrum of CdS nanocrystals ranging in size from 10 to 70 A radius has been studied in this article, showing that while the lowest electronic excited state is coupled strongly to the lattice, this coupling decreases as the nanocrystal size is decreased.
Journal ArticleDOI

Quantum confinement in Si and Ge nanostructures: Theory and experiment

TL;DR: The role of quantum confinement in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties as mentioned in this paper.
Journal ArticleDOI

Quantum confinement in Si and Ge nanostructures

TL;DR: In this article, perturbative effective mass theory was applied as a broadly applicable theoretical model for quantum confinement in all Si and Genanostructures including quantum wells(QWs), wires (Q-wires), and dots(QDs).
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