Journal ArticleDOI
Infrared Absorption and Photoconductivity in Irradiated Silicon
H. Y. Fan,A. K. Ramdas +1 more
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TLDR
In this article, the effects of irradiation on the infrared absorption and photoconductivity in silicon are reported, and the significance of these results is discussed in Section 2.1.Abstract:
The effects of irradiation on the infrared absorption and photoconductivity in silicon are reported. The absorption near the intrinsic edge is increased and drops off more gradually toward longer wavelengths. Several absorption bands are introduced by neutron irradiation with peak absorptions at 1.8, 3.3, 3.9, 5.5, and 6.0 μ, respectively. The observation of each band depends upon the position of the Fermi level. The 1.8‐μ band has also been studied for deuteron irradiated and electron irradiated silicon, and the 3.3‐μ band has been observed in electron irradiated samples. The absorption bands arise from electronic excitations of various types of defects and associated photoconductivity has been observed for the 3.9‐μ and 5.5‐μ bands. In addition absorption bands have been observed at long wavelengths: 20.5, 27.0, and 30.1 μ, which are associated with lattice vibration. The significance of these results is discussed.read more
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Optical Properties of Amorphous Semiconductors
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References
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Journal ArticleDOI
Infra-red Absorption in Semiconductors
TL;DR: In this paper, the authors classified the intrinsic absorption in semiconductors into four different types according to the mechanism: (i) intrinsic absorption associated with electron excitation across the energy gap; (ii) absorption due to the presence of free carriers; (iii) absorption resulting from impurities or lattice defects; and (iv) absorption related with lattice vibration.
Journal ArticleDOI
Radiation Damage in Ge and Si Detected by Carrier Lifetime Changes: Damage Thresholds
J. J. Loferski,P. Rappaport +1 more
TL;DR: In this paper, the effect of radiation-induced defects on the minority carrier lifetime in semiconductors is investigated. But the authors focus on the impact of the number of defects per µcm on the majority carrier lifetime and not on the conductivity of the semiconductor.
Journal ArticleDOI
Infrared Lattice Absorption Bands in Germanium, Silicon, and Diamond
R. J. Collins,H. Y. Fan +1 more
Journal ArticleDOI
Electron-bombardment damage in silicon
TL;DR: A spectrum of energy levels ruaning from 0.16 ev below the conduction band toward the middle of the gap is ascribed to a defect pair with variable spacing, and related to the discrete level 0.27 ev above the valence band.