Journal ArticleDOI
Infrared detection and mixing in heavily doped Schottky‐barrier diodes
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TLDR
In this paper, the authors evaluated the performance of Schottky-barrier diodes operating in the thermionic mode by applying the laws of vacuum tube electronics to the space charge region and by incorporating the treatment of the series-resistance effect into the discussion.Abstract:
Transit‐time and series‐resistance effects in heavily doped Schottky‐barrier diodes operating in the thermionic mode are evaluated by applying the laws of vacuum tube electronics to the space‐charge region and by incorporating the treatment of the series‐resistance effect into the discussion. It is assumed that the field distribution in the space‐charge region is linear, that collisions in the space‐charge region can be neglected, and that the signals are so small thatr the equations of motion can be linearized. The case of uniform field distribution is also briefly dealt with; the results are not significantly different from the linear field case. At a frequency equal to three times the plasma frequency of the bulk semiconductor the detection and mixing efficiency is about 0.25 times the low‐frequency value. The effect of the high‐frequency conductance of the space‐charge region turns out to be quite small when the series‐resistance effect is taken into account; the performance is then determined by a single transit‐time factor ‖g (jω) ‖2 and a series‐resistance factor that is independent of transit time. The effect of tunneling on the device performance is discussed briefly. Satisfactory detection and mixing performance seems feasible for the 10–40‐μm wavelength range.read more
Citations
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Journal ArticleDOI
Quantum limited detection in tunnel junction mixers
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Journal ArticleDOI
Terahertz detectors and focal plane arrays
Antoni Rogalski,Fiodor F. Sizov +1 more
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Terahertz Heterodyne Receivers
TL;DR: The state-of-the-art of terahertz heterodyne receivers are reviewed in this paper, with a focus on front-end components such as mixers and local oscillators.
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Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infrared
TL;DR: In this article, a family of novel three-terminal devices which rely on the transfer of a quasi-monoenergetic hot electron beam through a thin base is described.
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GaAs Schottky Diodes for THz Mixing Applications
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References
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Journal ArticleDOI
Electron tunneling and contact resistance of metal-silicon contact barriers
TL;DR: In this paper, the contact resistance of Al and Pt on n-type Si over a wide range of doping concentrations (10 18 → 2 × 10 20 cm −3 ) has been measured at both room temperature and liquid nitrogen temperature.
Book
Communication Circuits: Analysis and Design
Kenneth K. Clarke,Donald T. Hess +1 more
TL;DR: An unaltered reprint of the original Addison-Wesley edition of 1971 as mentioned in this paper is a textbook for a one-semester advanced undergraduate or graduate level course that deals with the understanding and use of devices and configurations of devices that bridge the gap between semiconductor or vacuum tube manufacture.
Journal ArticleDOI
ac electron tunneling at infrared frequencies: Thin‐film M‐O‐M diode structure with broad‐band characteristics
TL;DR: In this article, a high speed diode element consisting of a metal metaloxide metal electron tunneling junction is formed by thin films deposited on a substrate, which couple the junction to incident radiation.
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