Journal ArticleDOI
Infrared spectroscopic ellipsometry using a Fourier transform infrared spectrometer: some applications in thin-film characterization
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TLDR
In this article, the prototype of an infrared spectroscopic ellipsometer using a Fourier transform PC-based infrared spectrometer is described, and several applications in thin-film characterization are given, particularly in the case of bulk substrate, thick-layered materials, and determination of the dielectric function of layered materials such as silicon oxide and silicon nitride.Abstract:
The prototype of an infrared spectroscopic ellipsometer using a Fourier transform PC‐based infrared spectrometer is described. Several applications in thin‐film characterization are given, particularly in the case of bulk substrate, thick‐layered materials, and determination of the dielectric function of layered materials such as silicon oxide and silicon nitride. The sensitivity and possible improvements of this technique are discussed.read more
Citations
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Patent
Focused beam spectroscopic ellipsometry method and system
Timothy R. Piwonka-Corle,Karen F. Scoffone,Xing Chen,Lloyd LaComb,Jean-Louis P. Stehle,Dorian Zahorski,Jean-Pierre Rey +6 more
TL;DR: In this article, a method and system for spectroscopic ellipsometry employing reflective optics to measure a small region of a sample by reflecting radiation (preferably broadband UV, visible, and near infrared radiation) from the region is presented.
Journal ArticleDOI
Automatic rotating element ellipsometers: Calibration, operation, and real‐time applications
TL;DR: In a typical reflection ellipsometry experiment, one characterizes the polarization state change that a polarized light beam undergoes upon reflection from a specular surface as mentioned in this paper, where rp and rs are the complex amplitude reflection coefficients of the surface for p and s −polarized waves.
Journal ArticleDOI
Plasma chemical vapor deposition of hydrocarbon films: The influence of hydrocarbon source gas on the film properties
TL;DR: In this paper, a strong correlation was found between the hydrogen content of the films and the film properties, which was explained by the random-covalent network model, which is in contrast to a widely accepted study where no dependence of film properties on the source gas was observed, this being ascribed to a lost-memory effect.
Journal ArticleDOI
Phase modulated ellipsometry from the ultraviolet to the infrared: In situ application to the growth of semiconductors
TL;DR: A wide range of in situ applications of phase modulation (PME) techniques to semiconductor growth and interfaces have been reviewed in this article, where various spectroellipsometric techniques, based on PME, are presented.
Journal ArticleDOI
Direct Identification of the Synergism between Methyl Radicals and Atomic Hydrogen during Growth of Amorphous Hydrogenated Carbon Films
TL;DR: In this paper, the simultaneous interaction of methyl radicals (CH3) and atomic hydrogen (H) with the surface of amorphous hydrogenated carbon (a-C:H) film is investigated.
References
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Book
Handbook of Optical Constants of Solids
TL;DR: In this paper, E.D. Palik and R.R. Potter, Basic Parameters for Measuring Optical Properties, and W.W.Hunter, Measurement of Optical Constants in the Vacuum Ultraviolet Spectral Region.
Book
Ellipsometry and polarized light
TL;DR: In this article, the polarization of light waves and propagation of polarized light through polarizing optical systems are discussed. But the authors focus on the application of ellipsometry in the field of measurement in ellipsometer systems.
Journal ArticleDOI
Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate silicon
TL;DR: The detailed structure of porous Si (PS) layers formed in p-type wafers with resistivities 0.01-25 Omega cm has been investigated using reflectance, transmission, ellipsometry and photoluminescence techniques as discussed by the authors.