Journal ArticleDOI
Instability in resistance and variation of activation energy with thickness and deposition temperature of CdSe0.6Te0.4 thin films deposited at high substrate temperatures
TLDR
In this article, an oxygen adsorption model was used to explain the increase in resistance of thin films to oxygen and atmosphere exposure, and the decrease in activation energy with an increase in thickness and deposition temperature.Abstract:
CdSe0.6Te0.4 thin films deposited at high substrate temperatures showed a rapid increase in resistance when exposed to oxygen and atmosphere. This behavior is explained by an oxygen adsorption model. A decrease in activation energy with an increase in thickness and deposition temperature is explained by the fact that the depth of the impurity levels is reduced with an increase in thickness and deposition temperatures. The low activation energy obtained in oxygen or atmosphere heated films is accounted for by the fact that oxygen acceptor levels are very shallow from the conduction band.read more
Citations
More filters
Journal ArticleDOI
Structural and optical characterization of hot wall deposited CdSexTe1-x films
TL;DR: In this paper, the composition, structural, morphological, and optical properties of hot wall deposited films were investigated and the XRD analysis revealed that the films are like amorphous in nature for lower thicknesses but with increasing thickness a more preferred orientation along (1 − 0 − 1) direction was observed.
Journal ArticleDOI
Structural, optical and electrical properties of cadmium-doped lead chalcogenide (PbSe) thin films
TL;DR: In this article, the structural, optical and electrical properties of 100-xCdx thin films of thickness 3000 with variable concentrations of Cd (x=5, 10, 15 and 20) were prepared by thermal evaporation on glass substrates at room temperature at a base pressure of 10-6 Torr.
Journal ArticleDOI
Structural and optical properties of CdSexTe1 − x thin films grown by electron beam evaporation
TL;DR: In this article, ternary thin films have been deposited on glass substrates at room temperature by electron beam evaporation, using the source materials prepared in their laboratory by direct reaction of high purity elemental Cd(99.9999%), Se( 99.999%) and Te(99,999%).
Journal ArticleDOI
A study of band-bending and barrier height variation in thin film n-CdSe0.5Te0.5 photoanode/polysulphide junctions
TL;DR: In this article, it was found that the diode ideality factor decreases with increase of temperature, viz. from 3.00 to 2.00 with rise in temperature from 300 K to 333 K.
Journal ArticleDOI
Characterization of CdSexTe1−x sintered films for photovoltaic applications
TL;DR: In this article, the optical, structural and electrical properties of CdSe x Te 1− x sintered thin films have been examined using reflection spectra of these films recorded by spectrophotometer (model U-3400) in a wavelength range of 700-880nm.
References
More filters
Journal ArticleDOI
Charge transfer controlled surface interactions between oxygen and CdSe films
TL;DR: In this paper, the interaction of oxygen with CdSe surfaces has been studied with thin films of cdSe evaporated in ultra high vacuum in the temperature range 0-360°C and pressure range 10−4−10mm Hg.
Journal ArticleDOI
Structural and electrical properties of CdSexTe1−x thin films
S. Uthanna,P. Jayarama Reddy +1 more
TL;DR: The ternary semiconductors compounds are found to be very useful in the fabrication of thin film devices as discussed by the authors, and they are used in the preparation of CdSexTe1−x films (1 ⩾ x ¾ 0) in the thickness range 1000-3000 A by vacuum evaporation technique onto glass and mica substrates held at temperatures, 303 to 623 K in a vacuum better than 5 × 10−6 torr.
Journal ArticleDOI
Instability in the conductivity of cadmium selenide films
D.S.H. Chan,Arthur E. Hill +1 more
TL;DR: In this paper, the electrical properties of thin cadmium selenide films with controlled conditions were found to be unstable when the films were exposed to the atmosphere and discussed the phenomenon in terms of an existing oxygen adsorption model which has been further extended.