Journal ArticleDOI
Interfacial characteristics of a Fe3O4∕Nb(0.5%):SrTiO3 oxide junction
Darshan C. Kundaliya,S. B. Ogale,L. F. Fu,S. J. Welz,Joshua Higgins,G. Langham,S. K. Dhar,Nigel D. Browning,T. Venkatesan +8 more
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In this article, the temperature dependent Schottky diode characteristics of epitaxial junctions between Nb:SrTiO3 (Nb concentrations: 05%) and Fe3O4 are studied.Abstract:
The temperature dependent Schottky diode characteristics of epitaxial junctions between Nb:SrTiO3 (Nb concentrations: 05%) and Fe3O4 are studied Epitaxial thin films of Fe3O4 were grown on Nb:SrTiO3 substrates by pulsed laser deposition technique The films and heterointerfaces were characterized by x-ray diffraction, Z-contrast transmission electron microscopy, magnetic susceptibility, four-probe in-plane resistivity, and the temperature dependent junction current-voltage (I‐V) characteristics The nonlinear nature of the characteristics is analyzed within the framework of thermionic emission theory Junction parameters such as the Schottky barrier height (ϕB) and ideality factor (η) are extracted The temperature evolution of these parameters shows interesting and systematic trends, with remarkable changes near the Verwey transition (TV=120K) The magnetic field dependence of I‐V characteristic data is also recorded and a spin polarization of ∼80% is estimated for the magnetite electroderead more
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Microstructure and magnetic properties of strained Fe3O4 films
TL;DR: In this article, the microstructure and magnetic properties of magnetite films on (100)-oriented MgO and SrTiO3 (STO) substrates were investigated. And the growth of high quality Fe3O4 films was confirmed by x-ray diffraction analysis and Raman spectroscopy measurements.
Journal ArticleDOI
Rectifying property and giant positive magnetoresistance of Fe3O4∕SiO2∕Si heterojunction
TL;DR: In this paper, the effect of the reverse bias voltage on the temperature dependence of magnetoresistance was investigated and the results were discussed by considering the band structure of the heterojunction.
Journal ArticleDOI
Room temperature in-plane 〈100〉 magnetic easy axis for Fe3O4/SrTiO3(001):Nb grown by infrared pulsed laser deposition
Matteo Monti,Mikel Sanz,Mohamed Oujja,Esther Rebollar,Marta Castillejo,Francisco J. Pedrosa,Alberto Bollero,Julio Camarero,J. L. F. Cuñado,Norbert M. Nemes,Federico Mompean,Mar García-Hernández,Shu Nie,Kevin F. McCarty,Alpha T. N'Diaye,Gong Chen,Andreas K. Schmid,José F. Marco,Juan de la Figuera +18 more
TL;DR: In this paper, the authors examined the magnetic easy-axis directions of stoichiometric magnetite films grown on SrTiO3:Nb by infrared pulsed-laser deposition.
Journal ArticleDOI
Spin-polarized transport of electrons from polycrystalline Fe3O4 to amorphous Si
TL;DR: In this paper, the electrical transport mechanism across the disordered interface between polycrystalline Fe3O4 and amorphous Si layers is tunneling above the Verwey temperature of 120K.
Journal ArticleDOI
Investigation of high quality magnetite thin films grown on SrTiO3(001) substrates by pulsed laser deposition
A. Hamie,Yves Dumont,E. Popova,Arnaud Fouchet,Bénédicte Warot-Fonrose,Christophe Gatel,E. Chikoidze,J. Scola,Bruno Berini,Nicolas Keller +9 more
TL;DR: In this article, a systematic study of Fe 3 O 4 epitaxial films grown on single-crystalline SrTiO 3 (100) substrates using pulsed laser deposition has been conducted in order to elaborate magnetite films with properties suitable for their integration into spintronics heterostructures.
References
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Journal ArticleDOI
Observation of minority spin character of the new electron doped manganite La0.7Ce0.3MnO3 from tunneling magnetoresistance
Chiranjib Mitra,Pratap Raychaudhuri,Pratap Raychaudhuri,K. Dörr,Karl-Hartmut Müller,Ludwig Schultz,Peter M. Oppeneer,Steffen Wirth +7 more
TL;DR: The magnetotransport characteristics of a trilayer ferromagnetic tunnel junction built of an electron doped manganite and a hole dopedManganite strongly suggest that La0.7Ce0.3MnO3 is a minority spin carrier ferromagnet with a high degree of spin polarization, i.e., a transport half-metal.
Journal ArticleDOI
Progress toward electrical injection of spin-polarized electrons into semiconductors
TL;DR: These results demonstrate that spin injecting contacts can be formed using a very familiar and widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing.
Journal ArticleDOI
Highly rectifying Pr0.7Ca0.3MnO3∕SrTi0.9998Nb0.0002O3 p-n junction
TL;DR: In this paper, the authors have fabricated epitaxial Pr07Ca03MnO3∕SrTi09998Nb00002O3 (PCMO∕Nb:STO) junctions and characterized the interface electronic properties.
Journal ArticleDOI
Schottky barrier and spin polarization at the Fe 3 O 4 − Nb : Sr Ti O 3 interface
TL;DR: The spin polarization of the magnetite layer was determined to be about 60% as mentioned in this paper, which can be understood within a model for a Schottky contact with a ferromagnetic component.
Journal ArticleDOI
Interface states at semiconductor junctions
TL;DR: The experimental and theoretical progress in understanding the electronic structure and the related parameters of Schottky interfaces and heterojunctions is reviewed in this article, with particular emphasis devoted to the solution of several historical controversial points, to the impact of novel ab initio theoretical approaches, to new experimental techniques based on synchrotron light and free electron lasers.