Journal ArticleDOI
Investigations on the reasons for degradation of zinc tin oxide thin film transistor on exposure to air
Reads0
Chats0
TLDR
Amorphous zinc tin oxide thin film transistor (ZTO TFT) was fabricated in the inverted-staggered (top contact) structure on Si/SiO2 substrate.About:
This article is published in Materials Science in Semiconductor Processing.The article was published on 2018-02-01. It has received 10 citations till now. The article focuses on the topics: Thin-film transistor & Passivation.read more
Citations
More filters
Journal ArticleDOI
Highly Efficient Amorphous Zn2SnO4 Electron-Selective Layers Yielding over 20% Efficiency in FAMAPbI3-Based Planar Solar Cells
TL;DR: Amorphous Zn2SnO4 (am-ZTO) films with extreme surface uniformity, high electron mobility, and fewer charge traps were successfully developed by controlling the concentrations of 2-methoxyethanol so as to avoid charge traps as mentioned in this paper.
Journal ArticleDOI
Solution Processable PEDOT:PSS/Multiwalled Carbon Nanotube Composite Films for Flexible Electrode Applications
Jasna Mannayil,Shijeesh Methattel Raman,Jayalekshmi Sankaran,Reshmi Raman,Jayaraj Madambi Kunjukutan Ezhuthachan +4 more
Journal ArticleDOI
Preparation and electrical properties of N-doped ZnSnO thin film transistors
Shiqian Dai,Tao Wang,Ran Li,Qi Wang,Yaobin Ma,Longjie Tian,Jinbao Su,Ye Wang,Dongzhan Zhou,Xiqing Zhang,Yongsheng Wang +10 more
TL;DR: In this article, the preparation and electrical properties of N-doped ZnSnO (ZTO: N) thin film transistor (TFT) with a staggered bottom-gate structure were studied.
Journal ArticleDOI
Passivation of Thin Channel Zinc Tin Oxide TFTs Using Al 2 O 3 Deposited by O 3 -Based Atomic Layer Deposition
TL;DR: In this paper, a solution processed zinc tin oxide bottom gate top contact thin film transistors (TFTs) with active layer thickness down to 6 nm by varying the solution molarity and number of layers.
Journal ArticleDOI
Investigation on the electrical performances and stability of W-doped ZnO thin-film transistors
Ablat Abliz,Da Wan,Linyu Yang,Mamatrishat Mamat,Henglei Chen,Lei Xu,Chunlan Wang,Haiming Duan +7 more
TL;DR: In this article, the structural and electrical properties and stability of W-doped ZnO thin film transistors were investigated as a function of W doping concentration and a reasonable field effect mobility of 9.2 cm2/V s, current on/off ratio of 106, low threshold voltage of 4.5 V and small sub-threshold slope of 0.36 V/decade were simultaneously achieved.
References
More filters
Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
TL;DR: In this paper, the effect of water exposure on amorphous indium-gallium-zinc oxide (a-IGZO) semiconductors was investigated and two competing mechanisms depending on the thickness of the active channel were clarified.
Journal ArticleDOI
High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
TL;DR: In this article, transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated.
Journal ArticleDOI
Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
TL;DR: In this paper, the impact of the passivation layer on the stability of indium-gallium-zinc oxide (IGZO) thin film transistors was investigated, and the authors attributed the Vth instability to the interaction between the exposed IGZO backsurface and oxygen and/or water in the ambient atmosphere during the gate voltage stress.
Related Papers (5)
Effect of Mg addition on the electrical characteristics of solution-processed amorphous Mg–Zn–Sn–O thin film transistors
Ho Beom Kim,Ho Seong Lee +1 more