Journal ArticleDOI
Ion-beam mixing to create thermoelectric properties in alloys
TLDR
In this paper, the rastered ion beam was used to mix thin bismuth films with slightly thicker tellurium (Te) films, and two junctions each of mixed and unmixed Bi + Te were formed at the ends of the region exposed to the Kr beam, and upon heating one junction, quite large e.m.s.About:
This article is published in Nuclear Instruments and Methods in Physics Research.The article was published on 1983-05-01. It has received 11 citations till now. The article focuses on the topics: Ion beam mixing & Ion beam.read more
Citations
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Journal ArticleDOI
Phase evolution and electrical properties of Co–Sb alloys fabricated from Co/Sb bilayers by thermal annealing and ion beam mixing
Manju Bala,Compesh Pannu,Srashti Gupta,T. S. Tripathi,Surya Kant Tripathi,K. Asokan,D.K. Avasthi +6 more
TL;DR: It was observed that the alloys formed by ion-beam induced mixing exhibited higher electrical conductivity and thermoelectric power than the as-deposited and thermally annealed Co/Sb bilayer thin films.
Journal ArticleDOI
Ion beam mixing to produce Bi/Sb alloys for thin film thermoelectric devices
A.M. Ibrahim,D.A. Thompson +1 more
TL;DR: In this paper, the Seebeck coefficient, S, has a maximum value of 66 μ V K for an Sb concentration of 13% and a 30% increase in the figure of merit over that of a pure Bi film.
Journal ArticleDOI
PbTe formation by swift heavy ion beam induced interface mixing of Te/PbO bilayer
Srashti Gupta,Dinesh C. Agarwal,Jai Prakash,Sumsullah Khan,Shikhar Tripathi,A. K. Tripathi,Sonnathi Neeleshwar,Sanjeev Kumar Srivastava,B. K. Panigrahi,Ramesh Chandra,D.K. Avasthi +10 more
TL;DR: In this article, heavy ion beam induced mixing of the bilayer of PbO and Te was reported, with mixing rate at least an order of magnitude higher than that reported in other systems.
Journal ArticleDOI
PbTe nanocrystal formation by interface mixing of Te/Pb bilayer using low energy ions
Srashti Gupta,D. C. Agarwal,Sumsullah Khan,Sonnathi Neeleshwar,Sunil Ojha,Sanjeev Kumar Srivastava,A. K. Tripathi,S. Amirthapandian,B. K. Panigrahi,D. K. Avasthi +9 more
TL;DR: PbTe nanocrystals are synthesized using low energy ion beam mixing of a Te/Pb bilayer on a Si substrate in this article, which reveals that local spherical thermal spike contributes significantly to the mixing process whereas the possibilities of mixing at interface by ballistic process and radiation enhanced diffusion are rather low.
Journal ArticleDOI
Ion beam mixing of noble metals-Ge bilayer thin films
TL;DR: In this article, a new approach for the analysis of the relative contributions of the ion mixing mechanisms involved is presented, and it is found that both primary collisions and collisional cascade mechanisms contribute to ion mixing.
References
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Book ChapterDOI
Ion implantation in semiconductors
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
Ion Implantation in Semiconductors
James W. Mayer,József Gyulai +1 more
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
Journal ArticleDOI
Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures
TL;DR: In this article, the authors used ion-induced reactions in thin film systems to form equilibrium and metastable compounds, amorphous layers, and solid solutions, which can be obtained by splat-cooling or high dose plantation.
Journal ArticleDOI
Materials for thermoelectric refrigeration
F.D. Rosi,B. Abeles,R.V. Jensen +2 more
TL;DR: In this article, the electrical conductivity, thermoelectric power and thermal conductivity were measured on Bi2Te3 and the alloy systems (Bi,Sb) 2Te3, Bi2(Te,Se)2 and Bi2Sb 2 Te3, with a temperature difference of 65°C between the hot and cold junctions, with the hot junction at 300°K.
Related Papers (5)
Ion beam mixing to produce Bi/Sb alloys for thin film thermoelectric devices
A.M. Ibrahim,D.A. Thompson +1 more