Proceedings ArticleDOI
Ka-Band ultra low noise MMIC amplifier using pseudomorphic HEMTs
S. Fujimoto,Takayuki Katoh,T. Ishida,Tomoki Oku,Yoshinobu Sasaki,T. Ishikawa,Y. Mitsui +6 more
- Vol. 1, pp 17-20
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TLDR
In this paper, a Ka-band monolithic low noise two-stage amplifier was developed using an AlGaAs-InGaas-GaAs pseudomorphic HEMTs with a gate length of 0.15 /spl mu/m.Abstract:
A Ka-band monolithic low noise two stage amplifier has been developed using an AlGaAs-InGaAs-GaAs pseudomorphic HEMTs with a gate length of 0.15 /spl mu/m. For a superior noise figure, the MMIC was optimized by inserting a low loss resonator type stabilizing circuit without sacrificing the gain performance. The amplifier has achieved a 1.0 dB noise figure with an associated gain of 18.0 dB at 32 GHz. These results are the best of AlGaAs-InGaAs-GaAs P-HEMT MMICs ever reported to date.read more
Citations
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Proceedings ArticleDOI
High gain-density K-band P-HEMT LNA MMIC for LMDS and satellite communication
TL;DR: In this article, a miniature and broadband, K-band p-HEMT LNA MMIC was developed for LMDS (Local Multi-Point Distribution Service) and satellite communication.
Proceedings ArticleDOI
Ka-Band LNA MMIC's Realized in Fmax > 580 GHz GaN HEMT Technology
Miroslav Micovic,David F. Brown,D. Regan,Joel Wong,Joe Tai,A. Kurdoghlian,Herrault Florian G,Yan Tang,Shawn D. Burnham,Helen Fung,Adele E. Schmitz,Isaac Khalaf,Dayward Santos,Eric M. Prophet,Hector L. Bracamontes,Charles McGuire,Robert Grabar +16 more
TL;DR: In this paper, the first generation of GaN LNA MMIC circuits were reported, which are based on the latest generation of (ft > 320 GHz and fmax > 580 GHz) GaN Transistors.
Proceedings ArticleDOI
Full Ka-band High Performance InP MMIC LNA Module
TL;DR: In this paper, a 0.1mum InP HEMT Ka-band LNA with high and flat gain, very low noise figure and low VSWR has been developed.
Journal ArticleDOI
Microwave Noise and FET Devices
TL;DR: In this paper, a short presentation of available FET technologies (GaAs MESFET, ΠI-V HEMT, and silicon CMOS) has been presented.
Journal ArticleDOI
Extremely low-noise performance of GaAs MESFETs with wide-head T-shaped gate
TL;DR: In this article, the relation between the gate head length (L/sub h/) and the device performance is examined, and the gate resistance is also precisely calculated using the cold FET technique and Mahon and Anhold's method.
References
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Journal ArticleDOI
Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence
TL;DR: In this article, a simple noise model of a microwave MESFET (MODFET, HEMT, etc.) is described and verified at room and cryogenic temperatures.
Journal ArticleDOI
High-performance Ka-band monolithic low-noise amplifiers using 0.2-/spl mu/m dry-recessed GaAs PHEMTs
TL;DR: In this article, a low-damage selective dry etching was used for gate recess to achieve uniform threshold voltage (Vth) and saturation current (I/sub dss/).
Proceedings ArticleDOI
A super low noise V-band AlInAs/InGaAs HEMT processed by selective wet gate recess etching
N. Yoshida,Toshiaki Kitano,Yoshitsugu Yamamoto,K. Katoh,Hiroyuki Minami,H. Takano,Takuji Sonoda,S. Takamiya,S. Mitsui +8 more
TL;DR: In this article, a 0.15 /spl mu/m T-shaped gate AlInAs/InGaAs high electron mobility transistor (HEMT) with excellent RF performances has been developed using a selective wet gate recess etching.
Proceedings ArticleDOI
High performance Q-band 0.15 mu m InGaAs HEMT MMIC LNA
TL;DR: In this paper, a monolithic three-stage pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) low-noise amplifier is discussed.