Journal ArticleDOI
Low-temperature process to increase the grain size in polysilicon films
R. Reif,J.E. Knott +1 more
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TLDR
In this paper, a novel process for increasing the grain size in polycrystalline silicon films at temperatures near 500°C was described, which could lead to large-grain, uniformly oriented polysilicon films on amorphous surfaces.Abstract:
The letter describes a novel process for increasing the grain size in polycrystalline silicon films at temperatures near 500°C. This process, once perfected, could lead to mono-crystalline or large-grain, uniformly oriented polysilicon films on amorphous surfaces.read more
Citations
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Journal ArticleDOI
Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters
R. B. Iverson,R. Reif +1 more
TL;DR: In this paper, a theoretical and experimental study of the recrystallization behavior of polycrystalline silicon films amorphized by self-implantation was carried out and the crystallization behavior was found to be similar to the crystallisation behavior of films deposited in the amorphous state, however, a transient time was observed, during which negligible crystallization occurs.
Journal ArticleDOI
Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid-phase crystallization: Theory, experiments, and thin-film transistor applications
Noriyoshi Yamauchi,Rafael Reif +1 more
TL;DR: In this article, a review of the self-implantation method for polycrystalline silicon thin transistors is presented, and the mechanism of selective amorphization by the silicon self implantation and the crystallization by thermal annealing is discussed.
Journal ArticleDOI
Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film
TL;DR: In this paper, a poly-Si thin-film transistors with channel dimensions comparable to or smaller than the grain size of the polySi film were fabricated and characterized, and a remarkable improvement was observed in the device characteristics as the channel dimensions decreased to W=L=2 mu m. The improvement was attributed to a reduction in the effect of the grain boundaries and to the effect on the device's floating body.
Journal ArticleDOI
Implant‐dose dependence of grain size and {110} texture enhancements in polycrystalline Si films by seed selection through ion channeling
K. T.‐Y. Kung,R. Reif +1 more
TL;DR: In this paper, an optimized seed selection through ion channeling (SSIC) process was proposed for enhancing the grain size and texture of polycrystalline Si films grown by low-pressure chemical vapor deposition on SiO2.
Journal ArticleDOI
Solid phase epitaxial recrystallization of thin polysilicon films amorphized by silicon ion implantation
P. Kwizera,R. Reif +1 more
TL;DR: In this article, the ion beam was channeled through properly oriented polycrystalline grains, which acted as seeds for solid phase epitaxial recrystallization of the film.
References
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Book ChapterDOI
Ion implantation in semiconductors
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
Ion Implantation in Semiconductors
James W. Mayer,József Gyulai +1 more
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
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Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters
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