scispace - formally typeset
Journal ArticleDOI

LSA relaxation oscillator principles

TLDR
In this article, a simple analysis is developed which defines the inductive and capacitive time constants controlling the voltage waveshape and explains the frequency tuning with bias voltage and the effective space charge control.
Abstract
Oversized n-GaAs diodes operating in the LSA mode with doping-to-frequency ratios in the 1-5×105s/cm3range are investigated in circuits that contain a short-circuited high impedance transmission line foreshortened to resonate the electronic parallel capacitance of the diode. By comparing computer simulations with experiments, such diodes are shown to operate in a nonsinusoidal LSA relaxation mode which offers good efficiency, effective space-charge control, and a fast buildup of the oscillations; details of the computer program are also given. A simple analysis is developed which defines the inductive and capacitive time constants controlling the voltage waveshape and explains the frequency tuning with bias voltage and the effective space-charge control. The analysis is shown to be suitable for oscillator design purposes.

read more

Citations
More filters
Journal ArticleDOI

Computer simulation of transferred electron devices using the displaced Maxwellian approach

TL;DR: In this paper, the time and space-dependent Boltzmann equation is used to simulate GaAs transferred electron devices and assuming displaced Maxwellian distributions for the two conduction band valleys.
Journal ArticleDOI

Numerical simulation of nonstationary electron transport in Gunn devices in a harmonic mode oscillator circuit

TL;DR: In this article, the behavior of GaAs in harmonic mode oscillator circuits is numerically simulated taking nonstationary electron transport into account, the output power and dynamic impedances of the Gunn device are calculated for different passive circuitries.
Journal ArticleDOI

The influence of diffusion on the stability of the supercritical transferred electron amplifier

P. Jeppesen, +1 more
TL;DR: In this article, the influence of the diffusion coefficient-electric field characteristic on the stability of the supercritical n-GaAs transferred electron amplifier (TEA) with ohmic contacts was investigated in computer simulations.
Journal ArticleDOI

Numerical simulation and measurement of Gunn device dynamic microwave characteristics

TL;DR: In this paper, an improved implicit numerical simulation scheme has been devised that requires fewer approximations, that gives higher accuracy results with less computational time, and that encounters fewer problems of simulation convergence.
Journal ArticleDOI

Large-Signal Analysis of Terahertz Generation in Submicrometer GaN Diodes

TL;DR: In this paper, the conditions for microwave power generation in a submicrometer GaN diode, with a relatively lightly doped active channel, coupled to an external resonant circuit are investigated.
References
More filters
Journal ArticleDOI

LSA Oscillator‐Diode Theory

TL;DR: In this paper, the capacity of n-GaAs was investigated in the limited space charge accumulation (LSA) mode of oscillation and the usable range of doping to frequency was shown to be 2×104 to 2×105 sec/cm3 with an optimum value of about 6×104 sec/ cm3.
Journal ArticleDOI

Computer Study of Bulk GaAs Devices with Random One‐Dimensional Doping Fluctuations

TL;DR: In this article, the influence of one-dimensional random doping fluctuations and localized inhomogeneities on the performance of bulk GaAs oscillators was investigated and five different modes of oscillation were described and defined with the help of a mode chart.
Journal ArticleDOI

Time response of the high-field electron distribution function in GaAs

TL;DR: In this article, the high-field electron distribution function for GaAs, its small-signal frequency response and its behavior in large sinusoidal electric fields were analyzed and the response speed is limited by the low scattering rate within the (000) valley.
Related Papers (5)