Journal ArticleDOI
Luminescence studies of individual dislocations in II-VI (ZnSe) and III-V (InP) semiconductors
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TLDR
In this article, high-resolution luminescence studies from individual dislocations and related defects in ZnSe and InP performed in a transmission electron microscope were performed in the presence of complex dislocation tangles.Abstract:
Results are presented of high-resolution luminescence studies from individual dislocations and related defects in ZnSe and InP performed in a transmission electron microscope. In the case of ZnSe unusual luminescence bands (Y at 2.60 eV and S at 2.52 eV) originally observed in photoluminescence studies are attributed to dislocations. In some instances, complete quenching of the excitonic transitions was observed to correlate with the presence of Y emission from complex dislocation tangles. In the case of individual screw dislocations this quenching of the exciton luminescence was found to be variable; for example reduction of the exciton signal was not always observed. For InP, donor-exciton-related transitions were quenched at individual screw dislocations. Donor-acceptor pair/free-to-bound and deep level (band C) transitions were unaffected. For the case of InP, unlike ZnSe, no dislocation-related luminescence was observed within the system detection limit (0.7-4.0 eV).read more
Citations
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Journal ArticleDOI
Cathodoluminescence scanning electron microscopy of semiconductors
B. G. Yacobi,D. B. Holt +1 more
TL;DR: In this paper, a review of applications of cathodoluminescence scanning electron microscopy in the assessment of optical and electronic properties of semiconductors is presented, including information on band structure and impurity levels derived from spectroscopic cathodescence, analysis of dopant concentrations at a level which is in some cases several orders of magnitude better than x-ray microanalysis.
Journal ArticleDOI
Local probe techniques for luminescence studies of low-dimensional semiconductor structures
TL;DR: In this article, the state-of-the-art in local probe techniques for studying the properties of nanostructures, concentrating on methods involving monitoring the properties related to photon emission.
Journal ArticleDOI
Characterization of p‐type ZnSe
TL;DR: In this paper, the epitaxial layers are p-type with net acceptor concentrations (NA−ND) as high as 8×1016 cm−3, the highest ever reported for molecular beam epitaxia ZnSe. The details of the electrical and optical characterization of these layers are presented.
Journal ArticleDOI
Progress in Assessing Surface and Subsurface Integrity
TL;DR: In this article, the authors report on the development of tools for the assessment of surface integrity, and the experimental examination of surface alteration, and present examples of newly developed methods with the potential for assessing surface integrity.
Book
Extended Defects in Semiconductors: Electronic Properties, Device Effects and Structures
D. B. Holt,B. G. Yacobi +1 more
TL;DR: In this article, a survey of the properties, effects, roles, and characterization of extended defects in semiconductors is presented, with a focus on point defect maldistributions.
References
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Electron microscopy and analysis
TL;DR: In this article, the authors discuss the relationship between light and electrons and their interaction with the specimen, including the transmission electron microscope and the scanning electron microscopy (SEM).
Journal ArticleDOI
Evidence for low surface recombination velocity on n‐type InP
H. C. Casey,E. Buehler +1 more
TL;DR: In this paper, a comparison of the photoluminescent (PL) intensities of n-type InP and GaAs at room temperature was made, and the effect of surface recombination velocity S on the PL intensity was evaluated numerically.
Journal ArticleDOI
Hot electrons and phonons under high intensity photoexcitation of semiconductors
TL;DR: In this article, it has been shown that at relatively low intensities (5 W/cm 2 for GaAs) the photoexcited carrier distribution is Maxwellian with a carrier temperature T e different from the lattice temperature.
Journal ArticleDOI
Wannier Exciton in an Electric Field. I. Optical Absorption by Bound and Continuum States
TL;DR: In this paper, a comprehensive study of electric field effects on optical absorption by Wannier excitons is presented, showing that the electron-hole interaction enhances these oscillations near an ${M}_{0}$-type edge (positive effective masses) and quenches them near an${M}{3}$)-type edge(negative effective masses).