Journal ArticleDOI
Magnesium doping of efficient GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition
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Magnesium has been substituted for zinc in GaAs and Ga(0.75)In( 0.25)As solar cells grown by metalorganic chemical vapor deposition (MOCVD) as discussed by the authors.Abstract:
Magnesium has been substituted for zinc in GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)magnesium (Cp2Mg) is used as the MOCVD transport agent for Mg. Full retention of excellent material quality and efficient cell performance results. The substitution of Mg for Zn would enhance the abruptness and reproducibility of doping profiles, and facilitate high temperature processing and operation, due to the much lower diffusion coefficient of Mg, relative to Zn, in these materials.read more
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Metal-organic vapor phase epitaxy of compound semiconductors
TL;DR: The metal-organic vapor phase epitaxy (MOVPE) technique is emerging as the technique of choice in many applications to produce such exacting structures as mentioned in this paper, and the growth of epitaxial materials in the MOVPE technique is typically accomplished by the coreaction of reactive metal alkyls with a hydride of the non-metal component.
Journal ArticleDOI
21 % (one sun, air mass zero) 4 cm2 GaAs space solar cells
TL;DR: In this paper, the AlGaAs−GaAs heteroface structures have been grown in both the p•n and n•p configurations, and they have been characterized by a short-circuit current density of 32.3 mA/cm2, an open circuit voltage of 1.05 V, and a fill factor of 0.84, resulting in a conversion efficiency of 21.1%.
Journal ArticleDOI
Magnesium doping of (Al,Ga)As in metalorganic chemical vapor deposition
TL;DR: In this article, the properties of the grown layer have been investigated and the photoluminescence (PL) intensity increased when the growth temperature was increased and/or the V/III ratio was increased.
Patent
Avalanche photodiode structure with Mg doping and method
TL;DR: In this article, an avalanche photodiode structure has a graded magnesium guard ring formed by diffusion from an organic-metallic source, which is placed in an open flow reactor and heated while bis (cyclopentadienyl) magnesium vapor is flowed over the APD layers.
Proceedings ArticleDOI
Material Aspects Of The Fabrication Of Multijunction Solar Cells
TL;DR: The possibility of obtaining power conversion efficiencies in excess of 30 percent from practical multijunction concentrator solar cells has stimulated research on several approaches to achieve this goal as mentioned in this paper, and the important material and fabrication issues associated with each viable approach with the aim of providing additional perspective in assessing this research.
References
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Proceedings Article
Introduction to diffusion in semiconductors
TL;DR: Peregrinus as discussed by the authors describes the latest tech-niques of the design, fabrication and applications of m.o.s. l.t. integrated circuits and provides a compre¬ hensive, yet detailed, introduction to M.O.S. l t.i.
Journal ArticleDOI
Anomalous diffusion profiles of zinc in GaAs
B. Tuck,Mazin A. H. Kadhim +1 more
TL;DR: In this paper, an adaptation of the substitutional-interstitial diffusion theory is presented in which allowance is made for the possibility of the gallium vacancy concentration falling below the thermal equilibrium value.
Journal ArticleDOI
THE GROWTH OF MAGNESIUM-DOPED GaAs BY THE OM-VPE PROCESS
TL;DR: Magnesium-doped GaAs has been grown by organometallic vapor phase epitaxy (OM-VPE) as discussed by the authors, and the material is of high electrical and optical quality; controllable doping over the range 1015 to 1019cm-3 is reproducibly attained.
Journal ArticleDOI
Isoconcentration diffusion of zinc in GaAs at 1000° C
Mazin A. H. Kadhim,B. Tuck +1 more
TL;DR: In this paper, a series of experiments is described in which zinc is diffused into GaAs at 1000°C using an isoconcentration technique. But the results of both sets of experiments are shown to agree with a substitutional-interstitial mechanism for the diffusion of zinc in GaAs.
Journal ArticleDOI
The organometallic VPE growth of GaAs1−ySby using trimethylantimony and Ga1−xInxAs using trimethylarsenic
TL;DR: In this paper, the organometallic vapor phase epitaxial growth of Ga1−xInxAs and GaAs1−ySby using trimethylarsenic and trimethylantimony as the Group V sources is reported and the relevant chemistry is discussed.