Patent
Method for backside surface passivation of solar cells and solar cells with such passivation
TLDR
In this article, a method for dielectric passivating the surface of a solar cell by accumulation of negative fixed charges of a first type at the interface between semiconductor material and a passivating material is presented.Abstract:
The present invention provides a method for dielectric passivating the surface of a solar cell by accumulation of negative fixed charges of a first type at the interface between semiconductor material and a passivating material. According to the invention the passivating material comprises an oxide system, for example a binary oxide system, comprising Al2O3 and at least one metal oxide or metalloid oxide which enhances the tetrahedral structure of Al2O3, for example, an (Al2O3)x(TiO2)1-x alloy. In this way it is possible to combine the desirable properties from at least two different oxides, while eliminating the undesirable properties of each individual material. The oxide system can be deposited onto the semiconductor surface by means of a sol-gel method, comprising the steps of formation of the metal oxide and/or metalloid oxide sol and the aluminum solution and then carefully mixing these together under stirring and ultrasonic treatment. Thin films of the oxide system can then be deposited onto the semiconductor surface by means of spin coating followed by a temperature treatment.read more
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Patent
Surface passivated photovoltaic devices
Venkatesan Manivannan,Abasifreke Ebong,Jiunn-Ru Jeffrey Huang,Thomas Paul Feist,James Neil Johnson +4 more
TL;DR: In this article, a photovoltaic device consisting of an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter is provided.
Patent
Solar cell and method for manufacturing the same
TL;DR: In this paper, a solar cell and a method for manufacturing the same is described, which includes a substrate of a first conductive type, an anti-reflection layer that is positioned on the substrate and is formed of a transparent conductive oxide material.
Patent
Solar cell and method of manufacturing the same
TL;DR: In this paper, a solar cell with a substrate of a first conductive type having at least one via hole and an emitter layer only on at least a portion of the via hole is described.
Patent
Photovoltaic cell with thick silicon oxide and silicon nitride passivation and fabrication method
TL;DR: In this paper, a method for the production of a photovoltaic device, for instance solar cell, is disclosed, comprising the steps of providing a substrate having a front main surface and a rear surface; depositing a dielectric layer on the rear surface, wherein the dielectrically layer stack comprises a sub-stack of dielectrics layers, the substack having a thickness larger than 100 nm, the dieectric layer stack having a width larger than 200 nm; and forming back contacts through the diecell stack.
Patent
Passivation layer structure of solar cell and fabricating method thereof
TL;DR: In this article, a passivation layer structure of a solar cell, disposed on a substrate (10), is provided, and the surface passivation effect and carrier lifetime of a photoelectric device are enhanced.
References
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Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
A new electric field effect in silicon solar cells
TL;DR: In this article, the back surface field (BSF) cell was shown to have high open-circuit voltage due to the presence of a shallow diffused region at the back of the cell.
Patent
Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors
TL;DR: In this paper, the authors applied amorphous silicon, silicon carbon, silicon nitrogen or silicon carbon nitrogen over the nitrided ceramic SiO₂/metal oxide coating for further protection of electronic devices.
Patent
Method and apparatus for forming films from vapors using a contained plasma source
TL;DR: In this article, a partially confined plasma-activated source is used to create a gas plasma in the cavity as gas is introduced into the cavity, and the gas plasma is caused to exit from the cavity to impinge upon the surface of the article to be coated.