Patent
Method for detecting defects in semiconductor insulators
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TLDR
In this article, the reliability of thin film insulators is determined with noise measurements which find the barrier height mean and standard deviation, and the current spectral density is compared to a predetermined reference to detect the presence of defects in the insulator.Abstract:
The reliability of thin film insulators is determined with noise measurements which find the barrier height mean and standard deviation A constant voltage source is applied across the thin film insulator A low noise amplifier is connected across a resistor which is in series with the insulator A spectrum analyzer is connected to the low noise amplifier The power density is obtained by observing the output of a spectrum analyzer The current spectral density is compared to a predetermined reference to detect the presence of defects in the insulatorread more
Citations
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References
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Journal ArticleDOI
Unified presentation of 1/f noise in electron devices: fundamental 1/f noise sources
TL;DR: In this paper, a unified view of 1/f noise in semiconductors, semiconductor devices, and collision-free devices (like vacuum tubes) is presented from a unified point of view, using an extended version of the F.N. Hooge equation.
Journal ArticleDOI
Influence of barrier inhomogeneities on noise at Schottky contacts
TL;DR: In this article, it was shown that the electronic properties of Schottky contacts cannot be understood if one neglects spatial fluctuations of the Schittky barrier height, and that excess noise increases drastically when the standard deviation σs of the spatial distribution of barrier heights exceeds the critical threshold value of 2kT.
Journal ArticleDOI
Low-frequency noise in silicon-gate metal-oxide-silicon capacitors before oxide breakdown
TL;DR: In this article, it was shown that after a first time interval in which its power spectral density is stationary and proportional to I2t, an on-off modulation of It arises, just before oxide breakdown, which is related to localized phenomena controlled by trapping-detrapping processes within the oxide.
Journal ArticleDOI
Charge transport and trapping characteristics in thin nitride-oxide stacked films
TL;DR: In this article, a charge transport and trapping model for thin nitride-oxide stacked films between silicon substrates and polysilicon gates is proposed, where electron trapping reduces the leakage current and helps to lower the incidence of early failures for thin oxide stacked films.
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Techniques for impressing a voltage with an electron beam
TL;DR: In this paper, the outer portion of the insulating material may be, for example, a passivating layer and is provided with a metal film which extends over a conductive region to be tested.