Journal ArticleDOI
Influence of barrier inhomogeneities on noise at Schottky contacts
TLDR
In this article, it was shown that the electronic properties of Schottky contacts cannot be understood if one neglects spatial fluctuations of the Schittky barrier height, and that excess noise increases drastically when the standard deviation σs of the spatial distribution of barrier heights exceeds the critical threshold value of 2kT.Abstract:
Electronic properties of Schottky diodes depend sensitively on spatial inhomogeneities of the metal/semiconductor interface. We find that, contrary to previous theories for low‐frequency noise, the electronic properties of Schottky contacts cannot be understood if one neglects spatial fluctuations of the Schottky barrier height. Our systematic investigation of several silicide/silicon diodes yields as an empirical law that excess noise increases drastically when the standard deviation σs of the spatial distribution of Schottky barrier heights exceeds the critical threshold value of 2kT.read more
Citations
More filters
Journal ArticleDOI
Barrier inhomogeneities at Schottky contacts
TL;DR: In this article, a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltages measurements on spatially inhomogeneous Schottky contacts is presented.
Journal ArticleDOI
Recent advances in Schottky barrier concepts
TL;DR: Theoretical models of Schottky-barrier height formation are reviewed in this paper, with a particular emphasis on the examination of how these models agree with general physical principles, and new concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.
Journal ArticleDOI
The physics and chemistry of the Schottky barrier height
TL;DR: The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface as mentioned in this paper.
Journal ArticleDOI
Electron transport of inhomogeneous schottky barriers
TL;DR: The existence of barrier height nonuniformities is shown to provide a simple explanation of the following abnormal experimental results, routinely observed from various Schottky barriers: greater than unity ideality factors, the T0 effect, the "soft" reverse characteristics, and the dependence of the barrier height on the technique of measurement as discussed by the authors.
Journal ArticleDOI
Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts
TL;DR: In this paper, it was shown that the occurrence of a Gaussian distribution of then BHs is responsible for the decrease of the apparent BH Φb0, increase of the ideality factor n and non-linearity in the activation energy plot at low temperatures.
References
More filters
Book
Metal-semiconductor contacts
TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
Journal ArticleDOI
Schottky barrier and pn-junction I/V plots — Small signal evaluation
TL;DR: In this paper, the authors proposed and examined three different plots for the determination of the saturation current, the ideality factor, and the series resistance of Schottky diodes and solar cells from the measurement of a single current (I)/voltage (V) curve.
Journal ArticleDOI
Quantum approach to 1 f noise
TL;DR: In this paper, it was shown that any cross section, or process rate, involving charged particles, exhibits noise as an infrared phenomenon, and the observed noise is the sum of these contributions, and can be used to detect new infraquanta.
Journal ArticleDOI
Theory and experiments of 1/f noise in Schottky-barrier diodes operating in the thermionic-emission mode
TL;DR: In this article, a 1/f noise model for diodes operating in the thermionic-emission mode under forward bias conditions has been developed, based on mobility and diffusivity fluctuations occurring in the space charge region and accounts for the current-limiting role of the metal-semiconductor interface.
Journal ArticleDOI
Quantum 1/f noise associated with ionized impurity scattering and electron-phonon scattering in condensed matter
TL;DR: In this article, the authors derived the Born approximation for the mobility fluctuations due to the scattering rates, employing the relaxation time solutions of the Boltzmann transport equation, valid in non-degenerate semiconductors.