Patent
Method for lithography model calibration
Reads0
Chats0
TLDR
In this article, a method for separately calibrating an optical model and a resist model of the lithography process using information derived from in-situ aerial image measurements is proposed.Abstract:
A method for separately calibrating an optical model and a resist model of lithography process using information derived from in-situ aerial image measurements to improve the calibration of both the optical model and the resist model components of the lithography simulation model Aerial images produced by an exposure tool are measured using an image sensor array loaded into the exposure tool Multiple embodiments of measuring aerial image information and using the measured aerial image information to calibrate the optical model and the resist model are disclosed The method of the invention creates more accurate and separable optical and resist models, leading to better predictability of the pattern transfer process from mask to wafer, more accurate verification of circuit patterns and how they will actually print in production, and more accurate model-based process control in the wafer fabrication facilityread more
Citations
More filters
Patent
Methods and systems for utilizing design data in combination with inspection data
TL;DR: In this paper, a computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space.
Patent
Methods and systems for determining a position of inspection data in design data space
TL;DR: In this paper, a computer-implemented method for determining a centroid of an alignment target formed on a wafer using an image of the alignment target acquired by imaging the wafer is presented.
Patent
System and method for creating a focus-exposure model of a lithography process
TL;DR: In this article, a system and a method for creating a focus-exposure model of a lithography process is described, which utilizes calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space.
Patent
Methods and systems for detecting defects in a reticle design pattern
Ingrid B. Peterson,Ed Yum +1 more
TL;DR: In this paper, computer-implemented methods and systems for detecting defects in a reticle design pattern are provided, which illustrate how the reticle pattern will be projected on a wafer by the exposure system at different values of one or more parameters of the wafer printing process.
Patent
Methods, systems, and carrier media for evaluating reticle layout data
TL;DR: In this article, a method for evaluating reticle layout data is presented, which includes generating a simulated image using the reticle layouts data as input to a model of a reticle manufacturing process.
References
More filters
Journal ArticleDOI
Characterization of positive photoresist
TL;DR: In this paper, a new set of parameters used to describe the image forming properties of positive photoresist is presented. But these parameters are only used to model the development process and not the exposure process.
Proceedings ArticleDOI
Resist blur and line edge roughness (Invited Paper)
TL;DR: In this article, a straightforward analytic model of resist line edge roughness is presented which predicts all the known scaling laws as well as the shape of the experimentally seen frequency content or power spectrum of the roughness.
Patent
System and method for lithography simulation
TL;DR: In this article, the authors present a system and method that accelerates lithography simulation, inspection, characterization and evaluation of the optical characteristics and properties, as well as the effects and/or interactions of lithographic systems and processing techniques.
Patent
System and method for lithography process monitoring and control
TL;DR: In this article, a technique for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and materials used therewith, for example, photomasks is presented.
Patent
Method for detecting, sampling, analyzing, and correcting marginal patterns in integrated circuit manufacturing
TL;DR: In this paper, a method for detecting, sampling, analyzing, and correcting hot spots in an integrated circuit design allows the identification of the weakest patterns within each design layer, the accurate determination of the impact of process drifts upon the patterning performance of the real mask in a real scanner, and the optimum process correction, process monitoring, and RET improvements to optimize integrated circuit device performance and yield.