Patent
Method for plasma etching a chromium layer through a carbon hard mask suitable for photomask fabrication
Reads0
Chats0
TLDR
In this article, a method for etching chromium and forming a photomask using a carbon hard mask is described, which is useful for fabricating photomasks. But this method requires the chromium layer to be partially exposed through a patterned hard mask.Abstract:
Methods for etching chromium and forming a photomask using a carbon hard mask are provided. In one embodiment, a method of a chromium layer includes providing a substrate in a processing chamber, the substrate having a chromium layer partially exposed through a patterned carbon hard mask layer, providing a process gas containing chlorine and carbon monoxide into the etching chamber, and maintaining a plasma of the process gas and etching the chromium layer through the carbon hard mask layer. The method of etching a chromium layer through a patterned carbon hard mask layer is useful for fabricating photomasks.read more
Citations
More filters
Patent
Inductively coupled plasma reactor having RF phase control and methods of use thereof
Samer Banna,Valentin N. Todorow +1 more
TL;DR: In this paper, an inductively coupled plasma (ICP) reactor has a substrate bias that is capable of controlling the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source), which provides a powerful knob for fine process tuning.
Patent
Electrostatic chuck with advanced RF and temperature uniformity
Dmitry Lubomirsky,Jennifer Y. Sun,Mark Markovsky,Konstantin Makhratchev,Douglas A. Buchberger,Samer Banna +5 more
TL;DR: In this article, the authors describe an ESC with RF and temperature uniformity, where an upper metal portion is disposed below the top dielectric layer and a bus power bar distribution layer is coupled to the plurality of vias.
Patent
Ion Energy Control By RF Pulse Shape
TL;DR: In this article, a method for slope control of ion energy is described, which includes determining power levels and timings for achieving the pulse slope and sending the power levels to an RF generator to generate the RF pulse signal.
Patent
Adjustment of Power and Frequency Based on Three or More States
TL;DR: In this paper, the authors described a system for adjusting power and frequency based on three or more states of a pulsed signal having multiple states, including having a first state and having a second state.
Patent
Impedance-based adjustment of power and frequency
TL;DR: In this paper, a system for impedance-based adjustment of power and frequency is described, which includes a driver and an amplifier coupled to a plasma chamber for providing a radio frequency (RF) signal to the electrode.
References
More filters
Patent
Method of depositing an amorphous carbon layer
Kevin Fairbairn,Michael R. Rice,Timothy W. Weidman,Christopher S. Ngai,Ian S. Latchford,Christopher Dennis Bencher,Yuxiang May Wang +6 more
TL;DR: In this article, the amorphous carbon film is used as a hardmask for hard-masking an integrated circuit and an anti-reflective coating for deep ultraviolet (DUV) lithography.
Patent
Method of etching and cleaning using fluorinated carbonyl compounds
TL;DR: In this paper, a method comprising etching a material under plasma etching conditions using an etching composition which has a GWP of no greater than about 3000 and which comprises at least one etchant compound having a formula selected from the group consisting of FCO-CO-[(CR 1 R 2 ) m −CO] n −F and FCOCO-R 3 -CO-N −F, and wherein: m=0, 1, 2, 3, 4, or 5; n=1; R 1 & R 2 represent H, F or C
Patent
Silicon carbide deposition for use as a low dielectric constant anti-reflective coating
TL;DR: In this paper, a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications is presented. But the authors do not consider the effect of the thickness of the underlying layer for a given reflectivity.
Patent
Composition and method for cleaning residual debris from semiconductor surfaces
Gary Chen,Li Li +1 more
TL;DR: In this paper, a method for removing a dielectric anti-reflective coating (DARC) of silicon oxynitride material from a layer of insulative material which is formed over a substrate in a semiconductor device involves contacting the DARC material with a mixture of tetramethylammonium fluoride and at least one acid such as hydrofluoric acid, hydrochloric acid, nitric acid, phosphoric acid and acetic acid.
Patent
High density plasma CVD process for making dielectric anti-reflective coatings
TL;DR: An improved process for preparing nitrogen containing substrates selected from the group consisting of silicon oxynitride, silicon nitride and titanium nitride films and silicon dioxide cap films characterized by prevent resist contamination when used as dielectric antireflective coatings, using a high density plasma CVD system, is described in this article.
Related Papers (5)
Inductively coupled plasma reactor having RF phase control and methods of use thereof
Samer Banna,Valentin N. Todorow +1 more