Patent
Method of controlling the film properties of a cvd-deposited silicon nitride film
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TLDR
In this article, it was shown that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet-layer uniformity of a-SiNx:H films.Abstract:
We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface off a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4 / NH3 / N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiNx:H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.read more
Citations
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References
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Method of manufacturing a semiconductor device
TL;DR: In this article, a peeling layer and a semiconductor thin film are formed on a first substrate and individual support materials are formed thereupon, grooves are formed in the semiconductor layers and reaching the peeling layers are formed by etching using the individual support material as a mask.
Patent
Method and apparatus for forming a thin semiconductor film, method and apparatus for producing a semiconductor device, and electro-optical apparatus
Hideo Yamanaka,Hisayoshi Yamoto +1 more
TL;DR: In this article, a method for forming high-quality high-crystallinity polycrystalline or monocrystalline thin semiconductor film is described, and an apparatus for practicing the method is also disclosed.
Patent
Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
Hideo Yamakoshi,Koji Satake,Takeuchi Yoshiaki,Hiroshi Mashima,Aoi Tatsufumi,Masayoshi Murata +5 more
TL;DR: In this paper, a discharge plasma generating method is proposed, which involves opposing a discharge electrode having a substantially plane discharge portion to a substrate to be processed in a vacuum reaction vessel such that the discharge electrode and the substrate are substantially parallel to each other.
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Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates
TL;DR: In this article, high quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300°-350° C., and a pressure of at least 0.8 Torr.
Patent
Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors
D. W. Hess,Todd A. Brooks +1 more
TL;DR: In this paper, a process for the production of a solid thin film containing silicon and nitrogen on a substrate, said film having an aggregate low concentration of inorganic carbon and oxygen of less than about 51 atom percent, which process comprises: (a) contacting the substrate with a gaseous mixture itself comprising: (i) a volatile cyclic organic silicon-nitrogen source, and (ii) a reactant independently selected from hydrogen or a hydrogen nitrogen source, under plasma enhanced chemical vapor deposition conditions of pressure lower than 10 Torr and temperature greater than ambient temperature for a time
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