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Method of fabricating a thin-film device

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TLDR
In this paper, a method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical-insulator-based active layer.
Abstract
A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

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References
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Patent

Amorphous oxide and field effect transistor

TL;DR: In this article, a novel amorphous oxide applicable to an active layer of a TFT is provided, which consists of microcrystals and can be applied to any TFT.
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Transistor structures and methods for making the same

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