Patent
Method of manufacturing thin film transistor and active matrix assembly including same
TLDR
In this article, a thin film transistor including polycrystalline silicon or amorphous silicon thin film channel regions having a thickness of less than 2500 Å and active matrix assemblies including thin film transistors provide improved thin-type displays.Abstract:
Thin film transistor including polycrystalline silicon or amorphous silicon thin film channel regions having a thickness of less than 2500 Å and active matrix assemblies including thin film transistors provide improved thin-type displays.read more
Citations
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Semiconductor device and method for forming the same
TL;DR: In this article, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer, a thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising silicon oxide film formed on the thin film.
Patent
Semiconductor Device and Method of Fabricating the Same
TL;DR: In this paper, an active matrix display (AMD) with pixel electrodes, gate wirings and source wires is proposed, in which pixel electrodes are arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the amount of steps.
Patent
Semiconductor device and manufacturing method therefor
TL;DR: In this paper, a gate overlapping structure is realized with the side wall functioning as an electrode, where the first impurity region is formed to be overlapped with a side wall.
Patent
Method for Manufacturing Semiconductor Device
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent
Electro-optical device and method of driving the same
TL;DR: An active matrix display device for suppressing voltage variation ΔV due to off-operation of a gate pulse, including TFTs and picture-element electrodes, was proposed in this paper. But it was not shown in practice.
References
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Patent
Programmable semiconductor integrated circuitry including a programming semiconductor element
Toshiaki Masuhara,Osamu Minato,Katsuhiro Shimohigashi,Hiroo Masuda,Hideo Sunami,Yoshio Sakai,Yoshiaki Kamigaki,Eiji Takeda,Yoshimune Hagiwara +8 more
TL;DR: In this paper, a programmable semiconductor integrated circuitry including a circuit programming element is disclosed, which can be activated in a short-circuit mode by the irradiation of a laser or electron beam or by ion implantation so that it is converted from its original nonconductive state into a conductive or conductable state, thereby providing electrical connection between circuits and/or circuit elements of the integrated circuitry for a desired circuit programming such as circuit creation, circuit conversion or circuit substitution.
Patent
Display device with a thin film transistor and storage condenser
TL;DR: In this article, the drain electrode constituting an electrode of the accumulating condenser may also be so positioned as to bridge two adjacent gate lines provided across an insulating layer and a semiconductor layer thereby forming the storage condenser.
Patent
Regrowing selectively formed ion amorphosized regions by thermal gradient
TL;DR: In this paper, a single crystal silicon layer is formed on the principal plane of a sapphire substrate, and an amorphous portion is formed in a silicon layer leaving its surface portion of predetermined depth as it is.
Patent
Method of forming a semiconductor device on insulating substrate by selective amorphosization followed by simultaneous activation and reconversion to single crystal state
TL;DR: In this paper, a method for manufacturing semiconductor devices of a type in which a semiconductor element is formed on an insulating substrate is presented. But this method is not suitable for the case of high dimensional materials.
Patent
Thick contacts for ultra-thin silicon on insulator films
TL;DR: In this article, a method for making CMOS devices with ultra-thin Si channel regions and thick Si drain and source regions for good contact surfaces is described, and the authors describe a method to make such devices with Si channels and Si drain regions.
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